I-WSF6012 N&P-Channel 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET
Incazelo evamile
I-WSF6012 MOSFET iyidivayisi esebenza kahle kakhulu enomklamo ophezulu wokuminyana kwamaseli. Ihlinzeka nge-RDSON enhle kakhulu kanye nenkokhelo yesango elungele izinhlelo zokusebenza eziningi zokuguqula ibhakede. Ukwengeza, ihlangabezana nezidingo ze-RoHS ne-Green Product, futhi iza nesiqinisekiso se-EAS esingu-100% sokusebenza okugcwele nokuthembeka.
Izici
I-Advanced Trench Technology Enokuminyana Okuphezulu Kweseli, I-Super Low Gate Charge, Ukwehla Okuhle Kakhulu Kwe-CdV/dt Effect, 100% EAS Guarantee, kanye Nezinketho Zedivayisi Evumelana Nemvelo.
Izinhlelo zokusebenza
I-High Frequency Point-of-Load Buck Converter, Networking DC-DC Power System, Load Switch, E-cigarettes, ukushaja okungenantambo, izinjini, izinto zikagesi eziphuthumayo, ama-drones, ukunakekelwa kwezempilo, amashaja emoto, izilawuli, izisetshenziswa zedijithali, izinto zikagesi ezincane zasekhaya, kanye nama-electronics omthengi.
inombolo yezinto ezibonakalayo
I-AOS AOD603A,
Imingcele ebalulekile
Uphawu | Ipharamitha | Isilinganiso | Amayunithi | |
Isiteshi se-N | Isiteshi se-P | |||
I-VDS | I-Drain-Source Voltage | 60 | -60 | V |
VGS | Isango-Umthombo Voltage | ±20 | ±20 | V |
ID@TC=25℃ | I-Drain eqhubekayo yamanje, i-VGS @ 10V1 | 20 | -15 | A |
ID@TC=70℃ | I-Drain eqhubekayo yamanje, i-VGS @ 10V1 | 15 | -10 | A |
I-IDM | I-Pulsed Drain Yamanje2 | 46 | -36 | A |
I-EAS | I-Single Pulse Avalanche Energy3 | 200 | 180 | mJ |
I-IAS | I-Avalanche Yamanje | 59 | -50 | A |
PD@TC=25℃ | Ukushabalaliswa kwamandla okuphelele4 | 34.7 | 34.7 | W |
I-TSTG | Ibanga Lokushisa Lesitoreji | - 55 kuya ku-150 | - 55 kuya ku-150 | ℃ |
TJ | I-Operating Junction Temperature Range | - 55 kuya ku-150 | - 55 kuya ku-150 | ℃ |
Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi |
I-BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
△BVDSS/△TJ | I-BVDSS Temperature Coefficient | Ireferensi ku-25℃ , ID=1mA | --- | 0.063 | --- | V/℃ |
I-RDS(VULIWE) | I-Static Drain-Source On-Resistance2 | VGS=10V , ID=8A | --- | 28 | 37 | mΩ |
VGS=4.5V , ID=5A | --- | 37 | 45 | |||
I-VGS(th) | I-Gate Threshold Voltage | VGS=VDS , ID =250uA | 1 | --- | 2.5 | V |
△VGS(th) | I-VGS(th) I-Temperature Coefficient | --- | -5.24 | --- | mV/℃ | |
IDSS | I-Drain-Source Ukuvuza kwamanje | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
I-IGSS | Ukuvuza Kwesango Lomthombo Wamanje | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs | Phambili Transconductance | VDS=5V , ID=8A | --- | 21 | --- | S |
Rg | Isango Ukumelana | VDS=0V , VGS=0V , f=1MHz | --- | 3.0 | 4.5 | Ω |
Qg | Isamba Semali Yesango (4.5V) | VDS=48V , VGS=4.5V , ID=8A | --- | 12.6 | 20 | nC |
Qgs | I-Gate-Source Charge | --- | 3.5 | --- | ||
Qgd | I-Gate-Drain Charge | --- | 6.3 | --- | ||
I-Td(ivuliwe) | Vula Isikhathi Sokubambezeleka | VDD=30V , VGS=4.5V , RG=3.3Ω, ID=1A | --- | 8 | --- | ns |
Tr | Isikhathi Sokuvuka | --- | 14.2 | --- | ||
Td(cishiwe) | Ukuvala Isikhathi Sokubambezeleka | --- | 24.6 | --- | ||
Tf | Isikhathi Sekwindla | --- | 4.6 | --- | ||
Ciss | Amandla Wokufaka | VDS=15V , VGS=0V , f=1MHz | --- | 670 | --- | pF |
I-Coss | Amandla Okukhiphayo | --- | 70 | --- | ||
Crss | I-Reverse Transfer Capacitance | --- | 35 | --- |