I-WSF6012 N&P-Channel 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET

incazelo emfushane:

Inombolo Yemodeli:I-WSF6012

I-BVDSS:60V/-60V

RDSON:28mΩ/75mΩ

I-ID:20A/-15A

Isiteshi:Isiteshi se-N&P

Iphakheji:KUYA ku-252-4L

Ihlobo Lomkhiqizo:I-WSF6012 MOSFET inebanga lamandla kagesi angu-60V kanye -60V, ingakwazi ukuphatha imisinga efika ku-20A kanye -15A, inokumelana no-28mΩ no-75mΩ, ihlanganisa kokubili i-N&P-Channel, futhi ihlanganiswe ku-TO-252-4L.

Izicelo:Ogwayi be-elekthronikhi, amashaja angenantambo, izinjini, izipele zamandla, ama-drones, ukunakekelwa kwezempilo, amashaja emoto, izilawuli, izinto zikagesi, izinto zikagesi, nezimpahla zabathengi.

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Imininingwane Yomkhiqizo

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Incazelo evamile

I-WSF6012 MOSFET iyidivayisi esebenza kahle kakhulu enomklamo ophezulu wokuminyana kwamaseli. Ihlinzeka nge-RDSON enhle kakhulu kanye nenkokhelo yesango elungele izinhlelo zokusebenza eziningi zokuguqula ibhakede. Ukwengeza, ihlangabezana nezidingo ze-RoHS ne-Green Product, futhi iza nesiqinisekiso se-EAS esingu-100% sokusebenza okugcwele nokuthembeka.

Izici

I-Advanced Trench Technology Enokuminyana Okuphezulu Kweseli, I-Super Low Gate Charge, Ukwehla Okuhle Kakhulu Kwe-CdV/dt Effect, 100% EAS Guarantee, kanye Nezinketho Zedivayisi Evumelana Nemvelo.

Izinhlelo zokusebenza

I-High Frequency Point-of-Load Buck Converter, Networking DC-DC Power System, Load Switch, E-cigarettes, ukushaja okungenantambo, izinjini, izinto zikagesi eziphuthumayo, ama-drones, ukunakekelwa kwezempilo, amashaja emoto, izilawuli, izisetshenziswa zedijithali, izinto zikagesi ezincane zasekhaya, kanye nama-electronics omthengi.

inombolo yezinto ezibonakalayo

I-AOS AOD603A,

Imingcele ebalulekile

Uphawu	Ipharamitha	Isilinganiso		Amayunithi
Uphawu	Ipharamitha	Isiteshi se-N	Isiteshi se-P	Amayunithi
I-VDS	I-Drain-Source Voltage	60	-60	V
VGS	Isango-Umthombo Voltage	±20	±20	V
ID@TC=25℃	I-Drain eqhubekayo yamanje, i-VGS @ 10V1	20	-15	A
ID@TC=70℃	I-Drain eqhubekayo yamanje, i-VGS @ 10V1	15	-10	A
I-IDM	I-Pulsed Drain Yamanje2	46	-36	A
I-EAS	I-Single Pulse Avalanche Energy3	200	180	mJ
I-IAS	I-Avalanche Yamanje	59	-50	A
PD@TC=25℃	Ukushabalaliswa kwamandla okuphelele4	34.7	34.7	W
I-TSTG	Ibanga Lokushisa Lesitoreji	- 55 kuya ku-150	- 55 kuya ku-150	℃
TJ	I-Operating Junction Temperature Range	- 55 kuya ku-150	- 55 kuya ku-150	℃

Uphawu	Ipharamitha	Izimo	Okuncane.	Thayipha.	Ubukhulu.	Iyunithi
I-BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	60	---	---	V
△BVDSS/△TJ	I-BVDSS Temperature Coefficient	Ireferensi ku-25℃ , ID=1mA	---	0.063	---	V/℃
I-RDS(VULIWE)	I-Static Drain-Source On-Resistance2	VGS=10V , ID=8A	---	28	37	mΩ
I-RDS(VULIWE)	I-Static Drain-Source On-Resistance2	VGS=4.5V , ID=5A	---	37	45	mΩ
I-VGS(th)	I-Gate Threshold Voltage	VGS=VDS , ID =250uA	1	---	2.5	V
△VGS(th)	I-VGS(th) I-Temperature Coefficient	VGS=VDS , ID =250uA	---	-5.24	---	mV/℃
IDSS	Ukuvuza Komthombo Wamanje	VDS=48V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Ukuvuza Komthombo Wamanje	VDS=48V , VGS=0V , TJ=55℃	---	---	5	uA
I-IGSS	Ukuvuza Kwesango Lomthombo Wamanje	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Phambili Transconductance	VDS=5V , ID=8A	---	21	---	S
Rg	Isango Ukumelana	VDS=0V , VGS=0V , f=1MHz	---	3.0	4.5	Ω
Qg	Isamba Semali Yesango (4.5V)	VDS=48V , VGS=4.5V , ID=8A	---	12.6	20	nC
Qgs	I-Gate-Source Charge		---	3.5	---
Qgd	I-Gate-Drain Charge		---	6.3	---
I-Td(ivuliwe)	Vula Isikhathi Sokubambezeleka	VDD=30V , VGS=4.5V , RG=3.3Ω, ID=1A	---	8	---	ns
Tr	Isikhathi Sokuvuka		---	14.2	---
Td(cishiwe)	Ukuvala Isikhathi Sokubambezeleka		---	24.6	---
Tf	Isikhathi Sekwindla		---	4.6	---
Ciss	Amandla Wokufaka	VDS=15V , VGS=0V , f=1MHz	---	670	---	pF
I-Coss	Amandla Okukhiphayo		---	70	---
Crss	I-Reverse Transfer Capacitance		---	35	---