I-WSF4022 Dual N-Channel 40V 20A TO-252-4L WINSOK MOSFET
Incazelo evamile
I-WSF4022 iwumzila ophakeme kakhulu wokusebenza we-Dual N-Ch MOSFET onokuminyana kwamaseli aphezulu ngokwedlulele, ohlinzeka nge-RDSON enhle kakhulu kanye nenkokhelo yesango ezinhlelweni eziningi zokuguqulela ibhake. ukwethembeka kugunyaziwe.
Izici
Okwe-Fan Pre-driver H-Bridge,Motor Control,Synchronous Rectification,E-cigarettes, ukushaja okungenantambo, izinjini, izinsiza zikagesi eziphuthumayo, ama-drones, ukunakekelwa kwezokwelapha, amashaja emoto, izilawuli, imikhiqizo yedijithali, izinto zikagesi ezincane zasendlini, izinto zikagesi ezithengwayo.
Izinhlelo zokusebenza
Okwe-Fan Pre-driver H-Bridge,Motor Control,Synchronous Rectification,E-cigarettes, ukushaja okungenantambo, izinjini, izinsiza zikagesi eziphuthumayo, ama-drones, ukunakekelwa kwezokwelapha, amashaja emoto, izilawuli, imikhiqizo yedijithali, izinto zikagesi ezincane zasendlini, izinto zikagesi ezithengwayo.
inombolo yezinto ezibonakalayo
I-AOS
Imingcele ebalulekile
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi | |
| I-VDS | I-Drain-Source Voltage | 40 | V | |
| VGS | Isango-Umthombo Voltage | ±20 | V | |
| ID | Khipha Okwamanje (Okuqhubekayo) *AC | TC=25°C | 20* | A |
| ID | Khipha Okwamanje (Okuqhubekayo) *AC | TC=100°C | 20* | A |
| ID | Khipha Okwamanje (Okuqhubekayo) *AC | TA=25°C | 12.2 | A |
| ID | Khipha Okwamanje (Okuqhubekayo) *AC | TA=70°C | 10.2 | A |
| IDMa | I-Pulsed Drain yamanje | TC=25°C | 80* | A |
| EASb | I-Single Pulse Avalanche Energy | L=0.5mH | 25 | mJ |
| IAS b | I-Avalanche Yamanje | L=0.5mH | 17.8 | A |
| PD | Ukukhipha Amandla Okukhulu | TC=25°C | 39.4 | W |
| PD | Ukukhipha Amandla Okukhulu | TC=100°C | 19.7 | W |
| PD | Ukuchithwa kwamandla | TA=25°C | 6.4 | W |
| PD | Ukuchithwa kwamandla | TA=70°C | 4.2 | W |
| TJ | I-Operating Junction Temperature Range | 175 | ℃ | |
| I-TSTG | Izinga Lokushisa Lokusebenza/ Izinga Lokushisa Lokugcina | -55 ~ 175 | ℃ | |
| RJA b | I-Thermal Resistance Junction-Ambient | Isimo Esiqinile c | 60 | ℃/W |
| RθJC | I-Thermal Resistance Junction to Case | 3.8 | ℃/W |
| Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi |
| I-Static | ||||||
| V(BR)DSS | I-Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 40 | V | ||
| IDSS | I-Zero Gate Voltage Drain yamanje | I-VDS = 32V, VGS = 0V | 1 | µA | ||
| IDSS | I-Zero Gate Voltage Drain yamanje | VDS = 32V, VGS = 0V, TJ=85°C | 30 | µA | ||
| I-IGSS | Ukuvuza Kwesango Lamanje | VGS = ±20V, VDS = 0V | ±100 | nA | ||
| I-VGS(th) | I-Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1.1 | 1.6 | 2.5 | V |
| I-RDS(ivuliwe) d | I-Drain-Source On-state Resistance | VGS = 10V, ID = 10A | 16 | 21 | mΩ | |
| VGS = 4.5V, ID = 5A | 18 | 25 | mΩ | |||
| Umphathi wesango | ||||||
| Qg | Isamba Semali Yesango | VDS=20V,VGS=4.5V, ID=10A | 7.5 | nC | ||
| Qgs | I-Gate-Source Charge | 3.24 | nC | |||
| Qgd | I-Gate-Drain Charge | 2.75 | nC | |||
| Amandla | ||||||
| Ciss | Amandla Wokufaka | VGS=0V, VDS=20V, f=1MHz | 815 | pF | ||
| I-Coss | Amandla Okukhiphayo | 95 | pF | |||
| Crss | I-Reverse Transfer Capacitance | 60 | pF | |||
| td (ku) | Vula Isikhathi Sokubambezeleka | VDD=20V, VGEN=10V, I-IDS=1A,RG=6Ω,RL=20Ω. | 7.8 | ns | ||
| tr | Vula Isikhathi Sokuvuka | 6.9 | ns | |||
| td(cishiwe) | Ukucisha Ukubambezeleka Isikhathi | 22.4 | ns | |||
| tf | Ukuvala Isikhathi sokuwa | 4.8 | ns | |||
| I-Diode | ||||||
| I-VSDd | I-Diode Forward Voltage | I-ISD=1A, VGS=0V | 0.75 | 1.1 | V | |
| trr | Amandla Wokufaka | I-IDS=10A, dlSD/dt=100A/µs | 13 | ns | ||
| Qrr | Amandla Okukhiphayo | 8.7 | nC | |||
