I-WSD80120DN56 N-channel 85V 120A DFN5X6-8 WINSOK MOSFET
Uhlolojikelele lomkhiqizo we-WINSOK MOSFET
I-voltage ye-WSD80120DN56 MOSFET ingu-85V, okwamanje ingu-120A, ukumelana ngu-3.7mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.
Izindawo zokufaka izicelo ze-WINSOK MOSFET
Amandla kagesi ezokwelapha i-MOSFET, amathuluzi ezithombe i-MOSFET, ama-drones MOSFET, i-MOSFET yokulawula izimboni, i-5G MOSFET, i-automotive electronics MOSFET.
I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo
I-AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL13N8F7,STL135N8F7AG.
Imingcele ye-MOSFET
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi |
| I-VDS | I-Drain-Source Voltage | 85 | V |
| VGS | Isango-Source Voltage | ±25 | V |
| ID@TC=25℃ | I-Continuous Drain Current, VGS@ 10V | 120 | A |
| ID@TC=100℃ | I-Continuous Drain Current, VGS@ 10V | 96 | A |
| I-IDM | I-Pulsed Drain yamanje..TC=25°C | 384 | A |
| I-EAS | Amandla e-Avalanche, i-pulse eyodwa, L=0.5mH | 320 | mJ |
| I-IAS | I-Avalanche yamanje, i-pulse eyodwa, L=0.5mH | 180 | A |
| PD@TC=25℃ | Ukushabalaliswa kwamandla okuphelele | 104 | W |
| PD@TC=100℃ | Ukushabalaliswa kwamandla okuphelele | 53 | W |
| I-TSTG | Ibanga Lokushisa Lesitoreji | -55 kuya ku-175 | ℃ |
| TJ | I-Operating Junction Temperature Range | 175 | ℃ |
| Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi |
| BVI-DSS | I-Drain-Source Breakdown Voltage | VGS=0v, ngiD=250uA | 85 | --- | --- | V |
| △BVDSS/△TJ | BVI-DSSI-Temperature Coefficient | Ireferensi ku-25℃,ID=1mA | --- | 0.096 | --- | V/℃ |
| I-RDS(VULIWE) | I-Static Drain-Source On-Resistance | VGS=10V,ID=50A | --- | 3.7 | 4.8 | mΩ |
| I-VGS(th) | I-Gate Threshold Voltage | VGS=VDS,ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)I-Temperature Coefficient | --- | -5.5 | --- | mV/℃ | |
| IDSS | I-Drain-Source Ukuvuza kwamanje | VDS=85V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=85V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| I-IGSS | Ukuvuza Kwesango Lomthombo Wamanje | VGS=±25v ,vDS=0V | --- | --- | ±100 | nA |
| Rg | Isango Ukumelana | VDS=0V , VGS=0V , f=1MHz | --- | 3.2 | --- | Ω |
| Qg | Isamba Semali Yesango (10V) | VDS=50V , VGS=10V , ngiD=10A | --- | 54 | --- | nC |
| Qgs | I-Gate-Source Charge | --- | 17 | --- | ||
| Qgd | I-Gate-Drain Charge | --- | 11 | --- | ||
| I-Td(ivuliwe) | Vula Isikhathi Sokubambezeleka | VDD=50V , VGS=10V , RG=1Ω,RL=1Ω,IDS=10A. | --- | 21 | --- | ns |
| Tr | Isikhathi Sokuvuka | --- | 18 | --- | ||
| Td(cishiwe) | Ukuvala Isikhathi Sokubambezeleka | --- | 36 | --- | ||
| Tf | Isikhathi Sekwindla | --- | 10 | --- | ||
| Ciss | Amandla Wokufaka | VDS=40V , VGS=0V , f=1MHz | --- | 3750 | --- | pF |
| I-Coss | Amandla Okukhiphayo | --- | 395 | --- | ||
| Crss | I-Reverse Transfer Capacitance | --- | 180 | --- |
