I-WSD75N12GDN56 N-channel 120V 75A DFN5X6-8 WINSOK MOSFET
Uhlolojikelele lomkhiqizo we-WINSOK MOSFET
I-voltage ye-WSD75N12GDN56 MOSFET ingu-120V, okwamanje ingu-75A, ukumelana ngu-6mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.
Izindawo zokufaka izicelo ze-WINSOK MOSFET
Imishini yezokwelapha MOSFET, drones MOSFET, PD amandla kagesi MOSFET, LED amandla MOSFET, izimboni MOSFET.
Izinkambu zezicelo ze-MOSFETI-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.
Imingcele ye-MOSFET
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi |
| I-VDSS | I-Drain-to-Source Voltage | 120 | V |
| VGS | I-Gate-to-Source Voltage | ±20 | V |
| ID | 1 I-Continuous Drin Current (Tc=25℃) | 75 | A |
| ID | 1 I-Continuous Drain Current (Tc=70℃) | 70 | A |
| I-IDM | I-Pulsed Drain yamanje | 320 | A |
| IAR | I-pulse avalanche current eyodwa | 40 | A |
| EASa | I-pulse avalanche energy eyodwa | 240 | mJ |
| PD | Ukuchithwa kwamandla | 125 | W |
| TJ, Tst | I-Operating Junction kanye ne-Store Temperature Range | - 55 kuya ku-150 | ℃ |
| TL | Izinga Lokushisa Eliphezulu Lokuhlanganisa | 260 | ℃ |
| RθJC | Ukumelana Nokushisa, Ukuhlangana-kuya-Ikesi | 1.0 | ℃/W |
| RJA | Ukumelana Nokushisa, I-Junction-to-Ambient | 50 | ℃/W |
| Uphawu | Ipharamitha | Izimo Zokuhlola | Okuncane. | Thayipha. | Ubukhulu. | Amayunithi |
| I-VDSS | Khipha kuMthombo Wokuhlukana Kwe-voltage | VGS=0V, ID=250µA | 120 | -- | -- | V |
| IDSS | Khiphela Umthombo Ukuvuza Kwamanje | I-VDS = 120V, VGS= 0V | -- | -- | 1 | µA |
| I-IGSS(F) | Ukuvuza Kwesango Lomthombo Phambili | VGS =+20V | -- | -- | 100 | nA |
| I-IGSS(R) | Isango Lomthombo Ukuvuza Okuhlehliswayo | I-VGS =-20V | -- | -- | -100 | nA |
| I-VGS(TH) | I-Gate Threshold Voltage | VDS=VGS, ID = 250µA | 2.5 | 3.0 | 3.5 | V |
| I-RDS(VULIWE)1 | I-Drain-to-Source On-Resistance | VGS=10V, ID=20A | -- | 6.0 | 6.8 | mΩ |
| gFS | Phambili Transconductance | VDS=5V, ID=50A | 130 | -- | S | |
| Ciss | Amandla Wokufaka | VGS = 0V VDS = 50V f =1.0MHz | -- | 4282 | -- | pF |
| I-Coss | Amandla Okukhiphayo | -- | 429 | -- | pF | |
| Crss | I-Reverse Transfer Capacitance | -- | 17 | -- | pF | |
| Rg | Ukumelana nesango | -- | 2.5 | -- | Ω | |
| td(VULIWE) | Vula Isikhathi Sokubambezeleka | I-ID =20A VDS = 50V VGS = 10V RG = 5Ω | -- | 20 | -- | ns |
| tr | Isikhathi Sokuvuka | -- | 11 | -- | ns | |
| td(VALIWE) | Ukuvala Isikhathi Sokubambezeleka | -- | 55 | -- | ns | |
| tf | Isikhathi Sekwindla | -- | 28 | -- | ns | |
| Qg | Isamba Semali Yesango | VGS =0~10V VDS = 50VI-ID =20A | -- | 61.4 | -- | nC |
| Qgs | I-Gate Source Charge | -- | 17.4 | -- | nC | |
| Qgd | I-Gate Drain Charge | -- | 14.1 | -- | nC | |
| IS | I-Diode Phambili Yamanje | TC =25 °C | -- | -- | 100 | A |
| I-ISM | I-Diode Pulse Yamanje | -- | -- | 320 | A | |
| I-VSD | I-Diode Forward Voltage | IS=6.0A, VGS=0V | -- | -- | 1.2 | V |
| trr | Isikhathi Sokubuyisela emuva | IS=20A, VDD=50V dIF/dt=100A/μs | -- | 100 | -- | ns |
| Qrr | Buyisela Imali Yokubuyisela | -- | 250 | -- | nC |
