I-WSD60N10GDN56 N-channel 100V 60A DFN5X6-8 WINSOK MOSFET
Uhlolojikelele lomkhiqizo we-WINSOK MOSFET
I-voltage ye-WSD60N10GDN56 MOSFET ingu-100V, okwamanje ingu-60A, ukumelana ngu-8.5mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.
Izindawo zokufaka izicelo ze-WINSOK MOSFET
I-E-cigarettes MOSFET, i-MOSFET yokushaja okungenantambo, izinjini ze-MOSFET, i-drones MOSFET, ukunakekelwa kwezokwelapha i-MOSFET, amashaja ezimoto i-MOSFET, izilawuli i-MOSFET, imikhiqizo yedijithali i-MOSFET, izinto zikagesi ezincane zasendlini i-MOSFET, izinto zikagesi ezithengwayo i-MOSFET.
Izinkambu zezicelo ze-MOSFETI-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo
I-AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFINEON3BROSTFRONSEFINEON,IRTOMOSFINEON,IRTOMOSFET19 8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor I-MOSFET PDC92X.
Imingcele ye-MOSFET
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi |
| I-VDS | I-Drain-Source Voltage | 100 | V |
| VGS | Isango-Umthombo Voltage | ±20 | V |
| ID@TC=25℃ | Ukukhipha Okuqhubekayo Kwamanje | 60 | A |
| I-IDP | I-Pulsed Drain yamanje | 210 | A |
| I-EAS | Amandla e-Avalanche, i-Single pulse | 100 | mJ |
| PD@TC=25℃ | Ukushabalaliswa kwamandla okuphelele | 125 | W |
| I-TSTG | Ibanga Lokushisa Lesitoreji | - 55 kuya ku-150 | ℃ |
| TJ | I-Operating Junction Temperature Range | - 55 kuya ku-150 | ℃ |
| Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi |
| BVI-DSS | I-Drain-Source Breakdown Voltage | VGS=0v, ngiD=250uA | 100 | --- | --- | V |
| I-Static Drain-Source On-Resistance | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| I-RDS(VULIWE) | VGS=4.5V,ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| I-VGS(th) | I-Gate Threshold Voltage | VGS=VDS,ID=250uA | 1.0 | --- | 2.5 | V |
| IDSS | Ukuvuza Komthombo Wamanje | VDS=80V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| I-IGSS | Ukuvuza Kwesango Lomthombo Wamanje | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| Qg | Isamba Semali Yesango (10V) | VDS=50V , VGS=10V , ngiD=25A | --- | 49.9 | --- | nC |
| Qgs | I-Gate-Source Charge | --- | 6.5 | --- | ||
| Qgd | I-Gate-Drain Charge | --- | 12.4 | --- | ||
| I-Td(ivuliwe) | Vula Isikhathi Sokubambezeleka | VDD=50V , VGS=10V ,RG=2.2Ω, ngiD=25A | --- | 20.6 | --- | ns |
| Tr | Isikhathi Sokuvuka | --- | 5 | --- | ||
| Td(cishiwe) | Ukuvala Isikhathi Sokubambezeleka | --- | 51.8 | --- | ||
| Tf | Isikhathi Sekwindla | --- | 9 | --- | ||
| Ciss | Amandla Wokufaka | VDS=50V , VGS=0V , f=1MHz | --- | 2604 | --- | pF |
| I-Coss | Amandla Okukhiphayo | --- | 362 | --- | ||
| Crss | I-Reverse Transfer Capacitance | --- | 6.5 | --- | ||
| IS | Umthombo Oqhubekayo Wamanje | VG=VD=0V , Force Current | --- | --- | 60 | A |
| I-ISP | Umthombo Wamanje | --- | --- | 210 | A | |
| I-VSD | I-Diode Forward Voltage | VGS=0v, ngiS=12A , TJ=25℃ | --- | --- | 1.3 | V |
| trr | Isikhathi Sokubuyisela emuva | IF=12A,dI/dt=100A/µs,TJ=25℃ | --- | 60.4 | --- | nS |
| Qrr | Buyisela Imali Yokubuyisela | --- | 106.1 | --- | nC |
