I-WSD6070DN56 N-channel 60V 80A DFN5X6-8 WINSOK MOSFET
Uhlolojikelele lomkhiqizo we-WINSOK MOSFET
I-voltage ye-WSD6070DN56 MOSFET ingu-60V, okwamanje ingu-80A, ukumelana ngu-7.3mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.
Izindawo zokufaka izicelo ze-WINSOK MOSFET
I-E-cigarettes MOSFET, i-MOSFET yokushaja okungenantambo, izinjini ze-MOSFET, i-drones MOSFET, ukunakekelwa kwezokwelapha i-MOSFET, amashaja ezimoto i-MOSFET, izilawuli i-MOSFET, imikhiqizo yedijithali i-MOSFET, izinto zikagesi ezincane zasendlini i-MOSFET, izinto zikagesi ezithengwayo i-MOSFET.
I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo
I-POTENS Semiconductor MOSFET PDC696X.
Imingcele ye-MOSFET
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi |
| I-VDS | I-Drain-Source Voltage | 60 | V |
| VGS | Isango-Source Voltage | ±20 | V |
| TJ | I-Maximum Junction Temperature | 150 | °C |
| ID | Ibanga Lokushisa Lesitoreji | - 55 kuya ku-150 | °C |
| IS | I-Diode Eqhubekayo Phambili Yamanje, TC=25°C | 80 | A |
| ID | I-Continuous Drain Current, VGS=10V,TC=25°C | 80 | A |
| I-Continuous Drain Current, VGS=10V,TC=100°C | 66 | A | |
| I-IDM | I-Pulsed Drain yamanje, TC=25°C | 300 | A |
| PD | Ukukhipha Amandla Okukhulu, TC=25°C | 150 | W |
| Ukukhipha Amandla Okukhulu, TC=100°C | 75 | W | |
| RθJA | I-Thermal Resistance-Junction to Ambient ,t =10s ̀ | 50 | °C/W |
| I-Thermal Resistance-Junction to Ambient, Isimo Esiqinile | 62.5 | °C/W | |
| RqJC | I-Thermal Resistance-Junction to Case | 1 | °C/W |
| I-IAS | I-Avalanche yamanje, i-pulse eyodwa, L=0.5mH | 30 | A |
| EAS | Amandla e-Avalanche, i-pulse eyodwa, L=0.5mH | 225 | mJ |
| Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi |
| BVI-DSS | I-Drain-Source Breakdown Voltage | VGS=0v, ngiD=250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVI-DSSI-Temperature Coefficient | Ireferensi ku-25℃,ID=1mA | --- | 0.043 | --- | V/℃ |
| I-RDS(VULIWE) | I-Static Drain-Source On-Resistance2 | VGS=10V , ID=40A | --- | 7.0 | 9.0 | mΩ |
| I-VGS(th) | I-Gate Threshold Voltage | VGS=VDS,ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △I-VGS(th) | VGS(th)I-Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Ukuvuza Komthombo Wamanje | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| I-IGSS | Ukuvuza Kwesango Lomthombo Wamanje | VGS=±20v ,vDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=5v, ngiD=20A | --- | 50 | --- | S |
| Rg | Isango Ukumelana | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Isamba Semali Yesango (10V) | VDS=30V , VGS=10V , ngiD=40A | --- | 48 | --- | nC |
| Qgs | I-Gate-Source Charge | --- | 17 | --- | ||
| Qgd | I-Gate-Drain Charge | --- | 12 | --- | ||
| I-Td(ivuliwe) | Vula Isikhathi Sokubambezeleka | VDD=30V , VGEN=10V , RG=1Ω,ID=1A ,RL=15Ω. | --- | 16 | --- | ns |
| Tr | Isikhathi Sokuvuka | --- | 10 | --- | ||
| Td(cishiwe) | Ukuvala Isikhathi Sokubambezeleka | --- | 40 | --- | ||
| Tf | Isikhathi Sekwindla | --- | 35 | --- | ||
| Ciss | Amandla Wokufaka | VDS=30V , VGS=0V , f=1MHz | --- | 2680 | --- | pF |
| I-Coss | Amandla Okukhiphayo | --- | 386 | --- | ||
| Crss | I-Reverse Transfer Capacitance | --- | 160 | --- |
