I-WSD6060DN56 N-channel 60V 65A DFN5X6-8 WINSOK MOSFET

incazelo emfushane:

Inombolo Yengxenye:I-WSD6060DN56

I-BVDSS:60V

I-ID:65A

RDSON:7.5mΩ

Isiteshi:Isiteshi se-N

Iphakheji:DFN5X6-8

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Imininingwane Yomkhiqizo

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Uhlolojikelele lomkhiqizo we-WINSOK MOSFET

I-voltage ye-WSD6060DN56 MOSFET ingu-60V, okwamanje ingu-65A, ukumelana ngu-7.5mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.

Izindawo zokufaka izicelo ze-WINSOK MOSFET

I-E-cigarettes MOSFET, i-MOSFET yokushaja okungenantambo, izinjini ze-MOSFET, i-drones MOSFET, ukunakekelwa kwezokwelapha i-MOSFET, amashaja ezimoto i-MOSFET, izilawuli i-MOSFET, imikhiqizo yedijithali i-MOSFET, izinto zikagesi ezincane zasendlini i-MOSFET, izinto zikagesi ezithengwayo i-MOSFET.

I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo

I-STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

Imingcele ye-MOSFET

Uphawu	Ipharamitha		Isilinganiso	Iyunithi
Izilinganiso Ezivamile
I-VDSS	I-Drain-Source Voltage		60	V
I-VGSS	Isango-Umthombo Voltage		±20	V
T_J	I-Maximum Junction Temperature		150	°C
I-TSTG	Ibanga Lokushisa Lesitoreji		- 55 kuya ku-150	°C
I_S	I-Diode Eqhubekayo Yamanje	T_c=25°C	30	A
ID	Ukukhipha Okuqhubekayo Kwamanje	T_c=25°C	65	A
ID	Ukukhipha Okuqhubekayo Kwamanje	T_c=70°C	42	A
ngi DM b	I-Pulse Drain Yamanje Ihlolwe	T_c=25°C	250	A
P_D	Ukukhipha Amandla Okukhulu	T_c=25°C	62.5	W
P_D	Ukukhipha Amandla Okukhulu	T_C=70°C	38	W
R_qJL	I-Thermal Resistance-Junction to lead	Izwe elizinzile	2.1	°C/W
RqJA	I-Thermal Resistance-Junction to Ambient	t £ 10s	45	°C/W
RqJA	I-Thermal Resistance-Junction to Ambient	Izwe elizinzile^b	50	°C/W
MINA AS^d	I-Avalanche yamanje, i-Single pulse	L=0.5mH	18	A
E AS d	Amandla e-Avalanche, i-Single pulse	L=0.5mH	81	mJ

Uphawu	Ipharamitha	Izimo Zokuhlola		Okuncane.	Thayipha.	Ubukhulu.	Iyunithi
Izici Eziqinile
BV_I-DSS	I-Drain-Source Breakdown Voltage	V_GS=0v, ngi_DS=250mA		60	-	-	V
IDSS	I-Zero Gate Voltage Drain yamanje	V_DS=48V, V_GS=0V		-	-	1	mA
IDSS	I-Zero Gate Voltage Drain yamanje						mA
			T_J=85°C	-	-	30
I-VGS(th)	I-Gate Threshold Voltage	V_DS=V_GS,I_DS=250mA		1.2	1.5	2.5	V
I-IGSS	Ukuvuza Kwesango Lamanje	V_GS=±20V, V_DS=0V		-	-	±100	nA
I-R DS(KUVULIWE) 3	I-Drain-Source On-state Resistance	V_GS=10V, ngi_DS=20A		-	7.5	10	m W
I-R DS(KUVULIWE) 3	I-Drain-Source On-state Resistance	V_GS=4.5V, I_DS=15 A		-	10	15	m W
Izici ze-Diode
V SD	I-Diode Forward Voltage	I_SD=1A, V_GS=0V		-	0.75	1.2	V
t_rr	Isikhathi Sokubuyisela emuva	I_SD=20A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Buyisela Imali Yokubuyisela	I_SD=20A, dl_SD/dt=100A/µs		-	36	-	nC
Izici Ezinamandla^3,4
R_G	Isango Ukumelana	V_GS=0V,V_DS=0V,F=1MHz		-	1.5	-	W
C_iss	Amandla Wokufaka	V_GS=0V, V_DS=30V, F=1.0MHz Ω		-	1340	-	pF
C_oss	Amandla Okukhiphayo			-	270	-
C_rss	I-Reverse Transfer Capacitance			-	40	-
td(VULIWE)	Vula Isikhathi Sokubambezeleka	VDD=30V, IDS=1A, VGEN=10V, RG=6Ω.		-	15	-	ns
t_r	Vula Isikhathi Sokuvuka			-	6	-
td( VALIWE)	Ukucisha Ukubambezeleka Isikhathi			-	33	-
t_f	Ukuvala Isikhathi sokuwa			-	30	-
I-Gate Charge izici ^3,4
Q_g	Isamba Semali Yesango	V_DS=30V, V_GS=4.5V, I_DS=20A		-	13	-	nC
Q_g	Isamba Semali Yesango	V_DS=30V,V_GS=10V, I_DS=20A		-	27	-
Q_gth	I-Threshold Gate Charge			-	4.1	-
Q_gs	I-Gate-Source Charge			-	5	-
Q_gd	I-Gate-Drain Charge			-	4.2	-