I-WSD6040DN56 N-channel 60V 36A DFN5X6-8 WINSOK MOSFET
Uhlolojikelele lomkhiqizo we-WINSOK MOSFET
I-voltage ye-WSD6040DN56 MOSFET ingu-60V, okwamanje ingu-36A, ukumelana ngu-14mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.
Izindawo zokufaka izicelo ze-WINSOK MOSFET
I-E-cigarettes MOSFET, wireless charger MOSFET, motors MOSFET, drones MOSFET, medical care MOSFET, car charger MOSFET, controller MOSFET, digital products MOSFET, small house appliance MOSFET, consumer electronics MOSFET.
I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo
I-AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.
Imingcele ye-MOSFET
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi | ||
| I-VDS | I-Drain-Source Voltage | 60 | V | ||
| VGS | Isango-Umthombo Voltage | ±20 | V | ||
| ID | Ukukhipha Okuqhubekayo Kwamanje | TC=25°C | 36 | A | |
| TC=100°C | 22 | ||||
| ID | Ukukhipha Okuqhubekayo Kwamanje | TA=25°C | 8.4 | A | |
| TA=100°C | 6.8 | ||||
| I-IDMa | I-Pulsed Drain yamanje | TC=25°C | 140 | A | |
| PD | Ukukhipha Amandla Okukhulu | TC=25°C | 37.8 | W | |
| TC=100°C | 15.1 | ||||
| PD | Ukukhipha Amandla Okukhulu | TA=25°C | 2.08 | W | |
| TA=70°C | 1.33 | ||||
| IAS c | I-Avalanche yamanje, i-Single pulse | L=0.5mH | 16 | A | |
| I-EASc | I-Single Pulse Avalanche Energy | L=0.5mH | 64 | mJ | |
| IS | I-Diode Eqhubekayo Yamanje | TC=25°C | 18 | A | |
| TJ | I-Maximum Junction Temperature | 150 | ℃ | ||
| I-TSTG | Ibanga Lokushisa Lesitoreji | - 55 kuya ku-150 | ℃ | ||
| RθJAb | I-Thermal Resistance Junction kuya ku-ambient | Izwe elizinzile | 60 | ℃/W | |
| RθJC | I-Thermal Resistance-Junction to Case | Izwe elizinzile | 3.3 | ℃/W | |
| Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi | |
| I-Static | |||||||
| V(BR)DSS | I-Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | I-Zero Gate Voltage Drain yamanje | I-VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| I-IGSS | Ukuvuza Kwesango Lamanje | VGS = ±20V, VDS = 0V | ±100 | nA | |||
| Mayelana Nezici | |||||||
| I-VGS(TH) | I-Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1 | 1.6 | 2.5 | V | |
| I-RDS(ivuliwe)d | I-Drain-Source On-state Resistance | VGS = 10V, ID = 25A | 14 | 17.5 | mΩ | ||
| VGS = 4.5V, ID = 20A | 19 | 22 | mΩ | ||||
| Ukushintsha | |||||||
| Qg | Isamba Semali Yesango | I-VDS=30V VGS=10V ID=25A | 42 | nC | |||
| Qgs | I-Gate-Sour Charge | 6.4 | nC | ||||
| Qgd | I-Gate-Drain Charge | 9.6 | nC | ||||
| td (ku) | Vula Isikhathi Sokubambezeleka | VGEN=10V I-VDD=30V I-ID=1A RG=6Ω I-RL=30Ω | 17 | ns | |||
| tr | Vula Isikhathi Sokuvuka | 9 | ns | ||||
| td(cishiwe) | Ukucisha Ukubambezeleka Isikhathi | 58 | ns | ||||
| tf | Ukuvala Isikhathi sokuwa | 14 | ns | ||||
| Rg | Ukumelana nesango | VGS=0V, VDS=0V, f=1MHz | 1.5 | Ω | |||
| Amandla | |||||||
| Ciss | I-Capacitance | VGS=0V VDS=30V f=1MHz | 2100 | pF | |||
| I-Coss | Out Capacitance | 140 | pF | ||||
| Crss | I-Reverse Transfer Capacitance | 100 | pF | ||||
| Izimpawu ze-Drain-Source Diode kanye nezilinganiso eziphezulu | |||||||
| IS | Umthombo Oqhubekayo Wamanje | VG=VD=0V , Force Current | 18 | A | |||
| I-ISM | Umthombo Wamanje3 | 35 | A | ||||
| I-VSDd | I-Diode Forward Voltage | I-ISD = 20A , VGS=0V | 0.8 | 1.3 | V | ||
| trr | Isikhathi Sokubuyisela emuva | ISD=25A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Buyisela Imali Yokubuyisela | 33 | nC | ||||
