I-WSD45N10GDN56 N-channel 100V 45A DFN5X6-8 WINSOK MOSFET
Uhlolojikelele lomkhiqizo we-WINSOK MOSFET
I-voltage ye-WSD45N10GDN56 MOSFET ingu-100V, okwamanje ingu-45A, ukumelana ngu-14.5mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.
Izindawo zokufaka izicelo ze-WINSOK MOSFET
I-E-cigarettes MOSFET, i-MOSFET yokushaja okungenantambo, izinjini ze-MOSFET, i-drones MOSFET, ukunakekelwa kwezokwelapha i-MOSFET, amashaja ezimoto i-MOSFET, izilawuli i-MOSFET, imikhiqizo yedijithali i-MOSFET, izinto zikagesi ezincane zasendlini i-MOSFET, izinto zikagesi ezithengwayo i-MOSFET.
I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo
I-AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.
Imingcele ye-MOSFET
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi |
| I-VDS | I-Drain-Source Voltage | 100 | V |
| VGS | Isango-Source Voltage | ±20 | V |
| ID@TC=25℃ | I-Continuous Drain Current, VGS@ 10V | 45 | A |
| ID@TC=100℃ | I-Continuous Drain Current, VGS@ 10V | 33 | A |
| ID@TA=25℃ | I-Continuous Drain Current, VGS@ 10V | 12 | A |
| ID@TA=70℃ | I-Continuous Drain Current, VGS@ 10V | 9.6 | A |
| IDMa | I-Pulsed Drain yamanje | 130 | A |
| EASb | I-Single Pulse Avalanche Energy | 169 | mJ |
| IASb | I-Avalanche Yamanje | 26 | A |
| PD@TC=25℃ | Ukushabalaliswa kwamandla okuphelele | 95 | W |
| PD@TA=25℃ | Ukushabalaliswa kwamandla okuphelele | 5.0 | W |
| I-TSTG | Ibanga Lokushisa Lesitoreji | - 55 kuya ku-150 | ℃ |
| TJ | I-Operating Junction Temperature Range | - 55 kuya ku-150 | ℃ |
| Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi |
| BVI-DSS | I-Drain-Source Breakdown Voltage | VGS=0v, ngiD=250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | I-BVDSS Temperature Coefficient | Ireferensi ku-25℃,ID=1mA | --- | 0.0 | --- | V/℃ |
| I-RDS(VULIWE)d | I-Static Drain-Source On-Resistance2 | VGS=10V , ngiD=26A | --- | 14.5 | 17.5 | mΩ |
| I-VGS(th) | I-Gate Threshold Voltage | VGS=VDS,ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)I-Temperature Coefficient | --- | -5 | mV/℃ | ||
| IDSS | Ukuvuza Komthombo Wamanje | VDS=80V , VGS=0V , TJ=25℃ | --- | - | 1 | uA |
| VDS=80V , VGS=0V , TJ=55℃ | --- | - | 30 | |||
| I-IGSS | Ukuvuza Kwesango Lomthombo Wamanje | VGS=±20v ,vDS=0V | --- | - | ±100 | nA |
| Rge | Isango Ukumelana | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qge | Isamba Semali Yesango (10V) | VDS=50V , VGS=10V , ngiD=26A | --- | 42 | 59 | nC |
| Qgse | I-Gate-Source Charge | --- | 12 | -- | ||
| Qgde | I-Gate-Drain Charge | --- | 12 | --- | ||
| I-Td(ivuliwe)e | Vula Isikhathi Sokubambezeleka | VDD=30V , VGEN=10V , RG=6Ω ID=1A ,RL=30Ω | --- | 19 | 35 | ns |
| Tre | Isikhathi Sokuvuka | --- | 9 | 17 | ||
| Td(cishiwe)e | Ukuvala Isikhathi Sokubambezeleka | --- | 36 | 65 | ||
| Tfe | Isikhathi Sekwindla | --- | 22 | 40 | ||
| Cisse | Amandla Wokufaka | VDS=30V , VGS=0V , f=1MHz | --- | 1800 | --- | pF |
| I-Cosse | Amandla Okukhiphayo | --- | 215 | --- | ||
| Crsse | I-Reverse Transfer Capacitance | --- | 42 | --- |
