I-WSD4280DN22 Dual P-channel -15V -4.6A DFN2X2-6L WINSOK MOSFET
Uhlolojikelele lomkhiqizo we-WINSOK MOSFET
I-voltage ye-WSD4280DN22 MOSFET yi--15V, okwamanje ingu-4.6A, ukumelana ngu-47mΩ, isiteshi yi-Dual P-channel, kanti iphakheji yi-DFN2X2-6L.
Izindawo zokufaka izicelo ze-WINSOK MOSFET
Iswishi yokuvimbela kabili; Izinhlelo zokusebenza zokuguqula i-DC-DC;Ukushaja kwebhethri ye-Li;I-E-cigarette MOSFET, i-MOSFET yokushaja okungenantambo, i-MOSFET yokushaja imoto, isilawuli se-MOSFET, umkhiqizo wedijithali i-MOSFET, izinto zikagesi ezincane zasendlini i-MOSFET, izinto zikagesi zabathengi i-MOSFET.
I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo
I-PANJIT MOSFET PJQ2815
Imingcele ye-MOSFET
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi |
| I-VDS | I-Drain-Source Voltage | -15 | V |
| VGS | Isango-Umthombo Voltage | ±8 | V |
| ID@Tc=25℃ | I-Continuous Drain Current, VGS= -4.5V1 | -4.6 | A |
| I-IDM | I-300μS I-Pulsed Drain Yamanje, (VGS=-4.5V) | -15 | A |
| PD | Ukwehla kwamandla kagesi ngaphezu kwe-TA = 25°C (Qaphela 2) | 1.9 | W |
| I-TSTG, TJ | Ibanga Lokushisa Lesitoreji | - 55 kuya ku-150 | ℃ |
| RJA | I-Thermal Resistance Junction-ambient1 | 65 | ℃/W |
| RθJC | I-Thermal Resistance Junction-Case1 | 50 | ℃/W |
Izimpawu zikagesi (TJ=25 ℃, ngaphandle uma kuboniswe ngenye indlela)
| Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi |
| BVI-DSS | I-Drain-Source Breakdown Voltage | VGS=0v, ngiD=-250uA | -15 | --- | --- | V |
| △BVDSS/△TJ | I-BVDSS Temperature Coefficient | Ireferensi ku-25 ℃ , ID=-1mA | --- | -0.01 | --- | V/℃ |
| I-RDS(VULIWE) | I-Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-1A | --- | 47 | 61 | mΩ |
| VGS=-2.5V , ID=-1A | --- | 61 | 80 | |||
| VGS=-1.8V , ID=-1A | --- | 90 | 150 | |||
| I-VGS(th) | I-Gate Threshold Voltage | VGS=VDS,ID=-250uA | -0.4 | -0.62 | -1.2 | V |
| △VGS(th) | VGS(th)I-Temperature Coefficient | --- | 3.13 | --- | mV/℃ | |
| IDSS | I-Drain-Source Ukuvuza kwamanje | VDS=-10V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-10V , VGS=0V , TJ=55℃ | --- | --- | -5 | |||
| I-IGSS | Ukuvuza Kwesango Lomthombo Wamanje | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=-5V , ID=-1A | --- | 10 | --- | S |
| Rg | Isango Ukumelana | VDS=0V , VGS=0V , f=1MHz | --- | 2 | --- | Ω |
| Qg | Isamba Semali Yesango (-4.5V) | VDS=-10V , VGS=-4.5V , ID=-4.6A | --- | 9.5 | --- | nC |
| Qgs | I-Gate-Source Charge | --- | 1.4 | --- | ||
| Qgd | I-Gate-Drain Charge | --- | 2.3 | --- | ||
| I-Td(ivuliwe) | Vula Isikhathi Sokubambezeleka | VDD=-10V ,VGS=-4.5V , RG=1Ω ID=-3.9A, | --- | 15 | --- | ns |
| Tr | Isikhathi Sokuvuka | --- | 16 | --- | ||
| Td(cishiwe) | Ukuvala Isikhathi Sokubambezeleka | --- | 30 | --- | ||
| Tf | Isikhathi Sekwindla | --- | 10 | --- | ||
| Ciss | Amandla Wokufaka | VDS=-10V , VGS=0V , f=1MHz | --- | 781 | --- | pF |
| I-Coss | Amandla Okukhiphayo | --- | 98 | --- | ||
| Crss | I-Reverse Transfer Capacitance | --- | 96 | --- |
