I-WSD4098 Dual N-Channel 40V 22A DFN5*6-8 WINSOK MOSFET
Incazelo evamile
I-WSD4098DN56 iwumzila osebenza kahle kakhulu we-Dual N-Ch MOSFET onokuminyana kwamaseli aphezulu ngokwedlulele, ohlinzeka nge-RDSON enhle kakhulu kanye nokushajwa kwesango kuningi lezinhlelo zokusebenza zokuguqula ibhake elivumelanayo. I-WSD4098DN56 ihlangabezana nemfuneko ye-RoHS ne-Green Product engu-100% EAS eqinisekisiwe ngokuthembeka okugcwele okugunyaziwe.
Izici
Ubuchwepheshe be-Trench obuphezulu obusezingeni eliphezulu, I-Super Low Gate Charge, Ukwehla komphumela omuhle kakhulu we-CdV/dt, I-100% EAS Guaranteed, Idivayisi Eluhlaza Iyatholakala
Izinhlelo zokusebenza
I-High Frequency Point-of-Load Synchronous,I-Buck Converter ye-MB/NB/UMPC/VGA,Inethiwekhi ye-DC-DC Power System,I-Load Switch,E-cigarettes, ukushaja okungenantambo, izinjini, ama-drones, ukunakekelwa kwezokwelapha, amashaja emoto, izilawuli, idijithali imikhiqizo, izinto zikagesi ezincane zasendlini, izinto zikagesi zabathengi.
inombolo yezinto ezibonakalayo
I-AOS AON6884
Imingcele ebalulekile
| Uphawu | Ipharamitha | Isilinganiso | Iyunithi | |
| Izilinganiso Ezivamile | ||||
| I-VDSS | I-Drain-Source Voltage | 40 | V | |
| I-VGSS | Isango-Umthombo Voltage | ±20 | V | |
| TJ | I-Maximum Junction Temperature | 150 | °C | |
| I-TSTG | Ibanga Lokushisa Lesitoreji | - 55 kuya ku-150 | °C | |
| IS | I-Diode Eqhubekayo Yamanje | TA=25°C | 11.4 | A |
| ID | Ukukhipha Okuqhubekayo Kwamanje | TA=25°C | 22 | A |
| TA=70°C | 22 | |||
| ngi DM b | I-Pulse Drain Yamanje Ihlolwe | TA=25°C | 88 | A |
| PD | Ukukhipha Amandla Okukhulu | T. =25°C | 25 | W |
| TC=70°C | 10 | |||
| RqJL | I-Thermal Resistance-Junction to lead | Izwe elizinzile | 5 | °C/W |
| RqJA | I-Thermal Resistance-Junction to Ambient | ngo £10s | 45 | °C/W |
| Isimo Esiqinile b | 90 | |||
| Mina AS d | I-Avalanche yamanje, i-Single pulse | L=0.5mH | 28 | A |
| E AS d | Amandla e-Avalanche, i-Single pulse | L=0.5mH | 39.2 | mJ |
| Uphawu | Ipharamitha | Izimo Zokuhlola | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi | |
| Izici Eziqinile | |||||||
| I-BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V, IDS=250mA | 40 | - | - | V | |
| IDSS | I-Zero Gate Voltage Drain yamanje | VDS=32V, VGS=0V | - | - | 1 | mA | |
| TJ=85°C | - | - | 30 | ||||
| I-VGS(th) | I-Gate Threshold Voltage | VDS=VGS, IDS=250mA | 1.2 | 1.8 | 2.5 | V | |
| I-IGSS | Ukuvuza Kwesango Lamanje | VGS=±20V, VDS=0V | - | - | ±100 | nA | |
| I-R DS(ON) e | I-Drain-Source On-state Resistance | VGS=10V, IDS=14A | - | 6.8 | 7.8 | m W | |
| VGS=4.5V, IDS=12 A | - | 9.0 | 11 | ||||
| Izici ze-Diode | |||||||
| V SD e | I-Diode Forward Voltage | I-ISD=1A, VGS=0V | - | 0.75 | 1.1 | V | |
| trr | Isikhathi Sokubuyisela emuva | ISD=20A, dlSD/dt=100A/µs | - | 23 | - | ns | |
| Qrr | Buyisela Imali Yokubuyisela | - | 13 | - | nC | ||
| Izimpawu Ezinamandla f | |||||||
| RG | Isango Ukumelana | VGS=0V,VDS=0V,F=1MHz | - | 2.5 | - | W | |
| Ciss | Amandla Wokufaka | VGS=0V, I-VDS=20V, Imvamisa=1.0MHz | - | 1370 | 1781 | pF | |
| I-Coss | Amandla Okukhiphayo | - | 317 | - | |||
| Crss | I-Reverse Transfer Capacitance | - | 96 | - | |||
| td(VULIWE) | Vula Isikhathi Sokubambezeleka | I-VDD =20V, RL=20W, IDS=1A, VGEN=10V, RG=6W | - | 13.8 | - | ns | |
| tr | Vula Isikhathi Sokuvuka | - | 8 | - | |||
| td( VALIWE) | Ukucisha Ukubambezeleka Isikhathi | - | 30 | - | |||
| tf | Ukuvala Isikhathi sokuwa | - | 21 | - | |||
| Izimpawu zokushaja kwesango f | |||||||
| Qg | Isamba Semali Yesango | VDS=20V, VGS=10V, IDS=6A | - | 23 | 28 | nC | |
| Qg | Isamba Semali Yesango | VDS=20V, VGS=4.5V, IDS=6A | - | 22 | - | ||
| Qgth | I-Threshold Gate Charge | - | 2.6 | - | |||
| Qgs | I-Gate-Source Charge | - | 4.7 | - | |||
| Qgd | I-Gate-Drain Charge | - | 3 | - | |||












