I-WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET

imikhiqizo

I-WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET

incazelo emfushane:

Inombolo Yengxenye:I-WSD4080DN56

I-BVDSS:40V

I-ID:85A

RDSON:4.5mΩ 

Isiteshi:Isiteshi se-N

Iphakheji:DFN5X6-8


Imininingwane Yomkhiqizo

Isicelo

Omaka bomkhiqizo

Uhlolojikelele lomkhiqizo we-WINSOK MOSFET

I-voltage ye-WSD4080DN56 MOSFET ingu-40V, okwamanje ingu-85A, ukumelana ngu-4.5mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.

Izindawo zokufaka izicelo ze-WINSOK MOSFET

Imishini emincane MOSFET, izinto zikagesi eziphathwa ngesandla MOSFET, motors MOSFET.

I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo

I-AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.

Imingcele ye-MOSFET

Uphawu

Ipharamitha

Isilinganiso

Amayunithi

I-VDS

I-Drain-Source Voltage

40

V

VGS

Isango-Umthombo Voltage

±20

V

ID@TC=25℃

I-Continuous Drain Current, VGS @ 10V1

85

A

ID@TC=100℃

I-Continuous Drain Current, VGS @ 10V1

58

A

I-IDM

I-Pulsed Drain yamanje2

100

A

I-EAS

I-Single Pulse Avalanche Energy3

110.5

mJ

I-IAS

I-Avalanche Yamanje

47

A

PD@TC=25℃

Ukushabalaliswa kwamandla okuphelele4

52.1

W

I-TSTG

Ibanga Lokushisa Lesitoreji

- 55 kuya ku-150

TJ

I-Operating Junction Temperature Range

- 55 kuya ku-150

RJA

I-Thermal Resistance Junction-Ambient1

62

℃/W

RθJC

I-Thermal Resistance Junction-Case1

2.4

℃/W

 

Uphawu

Ipharamitha

Izimo

Okuncane.

Thayipha.

Ubukhulu.

Iyunithi

I-BVDSS

I-Drain-Source Breakdown Voltage VGS=0V , ID=250uA

40

---

---

V

I-RDS(VULIWE)

I-Static Drain-Source On-Resistance2 VGS=10V , ID=10A

---

4.5

6.5

VGS=4.5V , ID=5A

---

6.4

8.5

I-VGS(th)

I-Gate Threshold Voltage VGS=VDS , ID =250uA

1.0

---

2.5

V

IDSS

I-Drain-Source Ukuvuza kwamanje VDS=32V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=32V , VGS=0V , TJ=55℃

---

---

5

I-IGSS

Ukuvuza Kwesango Lomthombo Wamanje VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Phambili Transconductance VDS=10V , ID=5A

---

27

---

S

Qg

Isamba Semali Yesango (4.5V) VDS=20V , VGS=4.5V , ID=10A

---

20

---

nC

Qgs

I-Gate-Source Charge

---

5.8

---

Qgd

I-Gate-Drain Charge

---

9.5

---

I-Td(ivuliwe)

Vula Isikhathi Sokubambezeleka VDD=15V , VGS=10V RG=3.3ΩI-ID=1A

---

15.2

---

ns

Tr

Isikhathi Sokuvuka

---

8.8

---

Td(cishiwe)

Ukuvala Isikhathi Sokubambezeleka

---

74

---

Tf

Isikhathi Sekwindla

---

7

---

Ciss

Amandla Wokufaka VDS=15V , VGS=0V , f=1MHz

---

2354

---

pF

I-Coss

Amandla Okukhiphayo

---

215

---

Crss

I-Reverse Transfer Capacitance

---

175

---

IS

Umthombo Oqhubekayo Wamanje1,5 VG=VD=0V , Force Current

---

---

70

A

I-VSD

I-Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃

---

---

1

V


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