I-WSD4076DN56 N-channel 40V 76A DFN5X6-8 WINSOK MOSFET

imikhiqizo

I-WSD4076DN56 N-channel 40V 76A DFN5X6-8 WINSOK MOSFET

incazelo emfushane:

Inombolo Yengxenye:I-WSD4076DN56

I-BVDSS:40V

I-ID:76A

RDSON:6.9mΩ 

Isiteshi:Isiteshi se-N

Iphakheji:DFN5X6-8


Imininingwane Yomkhiqizo

Isicelo

Omaka bomkhiqizo

Uhlolojikelele lomkhiqizo we-WINSOK MOSFET

I-voltage ye-WSD4076DN56 MOSFET ingu-40V, okwamanje ingu-76A, ukumelana ngu-6.9mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.

Izindawo zokufaka izicelo ze-WINSOK MOSFET

Imishini emincane MOSFET, izinto zikagesi eziphathwa ngesandla MOSFET, motors MOSFET.

I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo

I-STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.

I-PANJIT MOSFET PJQ5442.

I-POTENS Semiconductor MOSFET PDC496X.

Imingcele ye-MOSFET

Uphawu

Ipharamitha

Isilinganiso

Amayunithi

I-VDS

I-Drain-Source Voltage

40

V

VGS

Isango-Source Voltage

±20

V

ID@TC=25

I-Continuous Drain Current, VGS@ 10V

76

A

ID@TC=100

I-Continuous Drain Current, VGS@ 10V

33

A

I-IDM

I-Pulsed Drain yamanjea

125

A

I-EAS

I-Single Pulse Avalanche Energyb

31

mJ

I-IAS

I-Avalanche Yamanje

31

A

PD@Ta=25

Ukushabalaliswa kwamandla okuphelele

1.7

W

I-TSTG

Ibanga Lokushisa Lesitoreji

- 55 kuya ku-150

TJ

I-Operating Junction Temperature Range

- 55 kuya ku-150

 

Uphawu

Ipharamitha

Izimo

Okuncane.

Thayipha.

Ubukhulu.

Iyunithi

BVI-DSS

I-Drain-Source Breakdown Voltage VGS=0v, ngiD=250uA

40

---

---

V

BVDSS/△TJ

BVI-DSSI-Temperature Coefficient Ireferensi ku-25,ID=1mA

---

0.043

---

V/

I-RDS(VULIWE)

I-Static Drain-Source On-Resistance2 VGS=10V , ID=12A

---

6.9

8.5

mΩ

I-RDS(VULIWE)

I-Static Drain-Source On-Resistance2 VGS=4.5V , ID=10A

---

10

15

I-VGS(th)

I-Gate Threshold Voltage VGS=VDS,ID=250uA

1.5

1.6

2.5

V

I-VGS(th)

VGS(th)I-Temperature Coefficient

---

-6.94

---

mV/

IDSS

I-Drain-Source Ukuvuza kwamanje VDS=32V , VGS=0V , TJ=25

---

---

2

uA

VDS=32V , VGS=0V , TJ=55

---

---

10

I-IGSS

Ukuvuza Kwesango Lomthombo Wamanje VGS=±20v ,vDS=0V

---

---

±100

nA

gfs

Phambili Transconductance VDS=5v, ngiD=20A

---

18

---

S

Rg

Isango Ukumelana VDS=0V , VGS=0V , f=1MHz

---

1.7

---

Ω

Qg

Isamba Semali Yesango (10V) VDS=20V , VGS=4.5V , ID=12A

---

5.8

---

nC

Qgs

I-Gate-Source Charge

---

3.0

---

Qgd

I-Gate-Drain Charge

---

1.2

---

I-Td(ivuliwe)

Vula Isikhathi Sokubambezeleka VDD=15V , VGEN=10V , RG=3.3Ω,ID=1A .

---

12

---

ns

Tr

Isikhathi Sokuvuka

---

5.6

---

Td(cishiwe)

Ukuvala Isikhathi Sokubambezeleka

---

20

---

Tf

Isikhathi Sekwindla

---

11

---

Ciss

Amandla Wokufaka VDS=15V , VGS=0V , f=1MHz

---

680

---

pF

I-Coss

Amandla Okukhiphayo

---

185

---

Crss

I-Reverse Transfer Capacitance

---

38

---


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