I-WSD40190DN56G N-channel 40V 190A DFN5X6-8 WINSOK MOSFET
Uhlolojikelele lomkhiqizo we-WINSOK MOSFET
I-voltage ye-WSD40120DN56G MOSFET ingu-40V, okwamanje yi-120A, ukumelana ngu-1.4mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.
Izindawo zokufaka izicelo ze-WINSOK MOSFET
I-E-cigarettes MOSFET, i-MOSFET yokushaja okungenantambo, i-drones MOSFET, i-MOSFET yokunakekelwa kwezokwelapha, amashaja ezimoto i-MOSFET, izilawuli i-MOSFET, imikhiqizo yedijithali i-MOSFET, izinto zikagesi ezincane zasendlini i-MOSFET, izinto zikagesi ezithengwayo i-MOSFET.
I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo
I-AOS MOSFET AON6234,AON6232,AON623.STMicroelectronics MOSFET STL14N4F7AG.POTENS Semiconductor MOSFET PDC496X.
Imingcele ye-MOSFET
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi |
| I-VDS | I-Drain-Source Voltage | 40 | V |
| VGS | Isango-Source Voltage | ±20 | V |
| ID@TC=25℃ | I-Continuous Drain Current, VGS@ 10V1 | 120 | A |
| ID@TC=100℃ | I-Continuous Drain Current, VGS@ 10V1 | 82 | A |
| I-IDM | I-Pulsed Drain yamanje2 | 400 | A |
| I-EAS | I-Single Pulse Avalanche Energy3 | 400 | mJ |
| I-IAS | I-Avalanche Yamanje | 40 | A |
| PD@TC=25℃ | Ukushabalaliswa kwamandla okuphelele4 | 125 | W |
| I-TSTG | Ibanga Lokushisa Lesitoreji | - 55 kuya ku-150 | ℃ |
| TJ | I-Operating Junction Temperature Range | - 55 kuya ku-150 | ℃ |
| Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi |
| BVI-DSS | I-Drain-Source Breakdown Voltage | VGS=0v, ngiD=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVI-DSSI-Temperature Coefficient | Ireferensi ku-25℃,ID=1mA | --- | 0.043 | --- | V/℃ |
| I-RDS(VULIWE) | I-Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | --- | 1.4 | 1.8 | mΩ |
| I-RDS(VULIWE) | I-Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A | --- | 2.0 | 2.6 | mΩ |
| I-VGS(th) | I-Gate Threshold Voltage | VGS=VDS,ID=250uA | 1.2 | 1.6 | 2.2 | V |
| △VGS(th) | VGS(th)I-Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | I-Drain-Source Ukuvuza kwamanje | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| I-IGSS | Ukuvuza Kwesango Lomthombo Wamanje | VGS=±20v ,vDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=5v, ngiD=20A | --- | 53 | --- | S |
| Rg | Isango Ukumelana | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Isamba Semali Yesango (10V) | VDS=15V , VGS=10V , ngiD=20A | --- | 45 | --- | nC |
| Qgs | I-Gate-Source Charge | --- | 12 | --- | ||
| Qgd | I-Gate-Drain Charge | --- | 18.5 | --- | ||
| I-Td(ivuliwe) | Vula Isikhathi Sokubambezeleka | VDD=15V , VGEN=10V , RG=3.3Ω,ID=20A ,RL=15Ω. | --- | 18.5 | --- | ns |
| Tr | Isikhathi Sokuvuka | --- | 9 | --- | ||
| Td(cishiwe) | Ukuvala Isikhathi Sokubambezeleka | --- | 58.5 | --- | ||
| Tf | Isikhathi Sekwindla | --- | 32 | --- | ||
| Ciss | Amandla Wokufaka | VDS=20V , VGS=0V , f=1MHz | --- | 3972 | --- | pF |
| I-Coss | Amandla Okukhiphayo | --- | 1119 | --- | ||
| Crss | I-Reverse Transfer Capacitance | --- | 82 | --- |
