I-WSD4018DN22 P-channel -40V -18A DFN2X2-6L WINSOK MOSFET

imikhiqizo

I-WSD4018DN22 P-channel -40V -18A DFN2X2-6L WINSOK MOSFET

incazelo emfushane:

Inombolo Yengxenye:I-WSD4018DN22

I-BVDSS:-40V

I-ID:-18A

RDSON:26mΩ 

Isiteshi:Isiteshi se-P

Iphakheji:I-DFN2X2-6L


Imininingwane Yomkhiqizo

Isicelo

Omaka bomkhiqizo

Uhlolojikelele lomkhiqizo we-WINSOK MOSFET

I-voltage ye-WSD4018DN22 MOSFET ingu-40V, yamanje yi--18A, ukumelana ngu-26mΩ, isiteshi yi-P-channel, kanti iphakheji yi-DFN2X2-6L.

Izindawo zokufaka izicelo ze-WINSOK MOSFET

Ubuchwepheshe be-Trench obuphezulu obusezingeni eliphezulu, I-Super Low Gate Charge, Ukwehla komphumela omuhle kakhulu we-Cdv/dt Idivayisi Eluhlaza Iyatholakala,Impahla yokuqaphela ubuso i-MOSFET, i-e-cigarette MOSFET, izinto zikagesi zasendlini ezincane i-MOSFET, ishaja yemoto i-MOSFET.

I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo

I-AOS MOSFET AON2409,POTENS MOSFET PDB3909L

Imingcele ye-MOSFET

Uphawu

Ipharamitha

Isilinganiso

Amayunithi

I-VDS

I-Drain-Source Voltage

-40

V

VGS

Isango-Umthombo Voltage

±20

V

ID@Tc=25℃

I-Continuous Drain Current, VGS@ -10V1

-18

A

ID@Tc=70℃

I-Continuous Drain Current, VGS@ -10V1

-14.6

A

I-IDM

300μS I-Pulsed Drain Yamanje, VGS=-4.5V2

54

A

PD@Tc=25℃

Ukushabalaliswa kwamandla okuphelele3

19

W

I-TSTG

Ibanga Lokushisa Lesitoreji

- 55 kuya ku-150

TJ

I-Operating Junction Temperature Range

- 55 kuya ku-150

Izimpawu zikagesi (TJ=25 ℃, ngaphandle uma kuboniswe ngenye indlela)

Uphawu

Ipharamitha

Izimo

Okuncane.

Thayipha.

Ubukhulu.

Iyunithi

BVI-DSS

I-Drain-Source Breakdown Voltage VGS=0v, ngiD=-250uA

-40

---

---

V

△BVDSS/△TJ

I-BVDSS Temperature Coefficient Ireferensi ku-25 ℃ , ID=-1mA

---

-0.01

---

V/℃

I-RDS(VULIWE)

I-Static Drain-Source On-Resistance2 VGS=-10V , ID=-8.0A

---

26

34

VGS=-4.5V , ID=-6.0A

---

31

42

I-VGS(th)

I-Gate Threshold Voltage VGS=VDS,ID=-250uA

-1.0

-1.5

-3.0

V

△VGS(th)

VGS(th)I-Temperature Coefficient

---

3.13

---

mV/℃

IDSS

Ukuvuza Komthombo Wamanje VDS=-40V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=-40V , VGS=0V , TJ=55℃

---

---

-5

I-IGSS

Ukuvuza Kwesango Lomthombo Wamanje VGS=±20V , VDS=0V

---

---

±100

nA

Qg

Isamba Semali Yesango (-4.5V) VDS=-20V , VGS=-10V , ID=-1.5A

---

27

---

nC

Qgs

I-Gate-Source Charge

---

2.5

---

Qgd

I-Gate-Drain Charge

---

6.7

---

I-Td(ivuliwe)

Vula Isikhathi Sokubambezeleka VDD=-20V , VGS=-10V ,RG=3Ω , RL=10Ω

---

9.8

---

ns

Tr

Isikhathi Sokuvuka

---

11

---

Td(cishiwe)

Ukuvala Isikhathi Sokubambezeleka

---

54

---

Tf

Isikhathi Sekwindla

---

7.1

---

Ciss

Amandla Wokufaka VDS=-20V , VGS=0V , f=1MHz

---

1560

---

pF

I-Coss

Amandla Okukhiphayo

---

116

---

Crss

I-Reverse Transfer Capacitance

---

97

---


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