I-WSD40110DN56G N-channel 40V 110A DFN5X6-8 WINSOK MOSFET
Uhlolojikelele lomkhiqizo we-WINSOK MOSFET
I-voltage ye-WSD4080DN56 MOSFET ingu-40V, okwamanje ingu-85A, ukumelana ngu-4.5mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.
Izindawo zokufaka izicelo ze-WINSOK MOSFET
Imishini emincane MOSFET, izinto zikagesi eziphathwa ngesandla MOSFET, motors MOSFET.
I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo
I-AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.
Imingcele ye-MOSFET
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi |
| I-VDS | I-Drain-Source Voltage | 40 | V |
| VGS | Isango-Source Voltage | ±20 | V |
| ID@TC=25℃ | I-Continuous Drain Current, VGS @ 10V1 | 85 | A |
| ID@TC=100℃ | I-Continuous Drain Current, VGS @ 10V1 | 58 | A |
| I-IDM | I-Pulsed Drain yamanje2 | 100 | A |
| I-EAS | I-Single Pulse Avalanche Energy3 | 110.5 | mJ |
| I-IAS | I-Avalanche Yamanje | 47 | A |
| PD@TC=25℃ | Ukushabalaliswa kwamandla okuphelele4 | 52.1 | W |
| I-TSTG | Ibanga Lokushisa Lesitoreji | - 55 kuya ku-150 | ℃ |
| TJ | I-Operating Junction Temperature Range | - 55 kuya ku-150 | ℃ |
| RθJA | I-Thermal Resistance Junction-Ambient1 | 62 | ℃/W |
| RθJC | I-Thermal Resistance Junction-Case1 | 2.4 | ℃/W |
| Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi |
| I-BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| I-RDS(VULIWE) | I-Static Drain-Source On-Resistance2 | VGS=10V , ID=10A | --- | 4.5 | 6.5 | mΩ |
| VGS=4.5V , ID=5A | --- | 6.4 | 8.5 | |||
| I-VGS(th) | I-Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V |
| IDSS | Ukuvuza Komthombo Wamanje | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| I-IGSS | Ukuvuza Kwesango Lomthombo Wamanje | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=10V , ID=5A | --- | 27 | --- | S |
| Qg | Isamba Semali Yesango (4.5V) | VDS=20V , VGS=4.5V , ID=10A | --- | 20 | --- | nC |
| Qgs | I-Gate-Source Charge | --- | 5.8 | --- | ||
| Qgd | I-Gate-Drain Charge | --- | 9.5 | --- | ||
| I-Td(ivuliwe) | Vula Isikhathi Sokubambezeleka | VDD=15V , VGS=10V RG=3.3Ω I-ID=1A | --- | 15.2 | --- | ns |
| Tr | Isikhathi Sokuvuka | --- | 8.8 | --- | ||
| Td(cishiwe) | Ukuvala Isikhathi Sokubambezeleka | --- | 74 | --- | ||
| Tf | Isikhathi Sekwindla | --- | 7 | --- | ||
| Ciss | Amandla Wokufaka | VDS=15V , VGS=0V , f=1MHz | --- | 2354 | --- | pF |
| I-Coss | Amandla Okukhiphayo | --- | 215 | --- | ||
| Crss | I-Reverse Transfer Capacitance | --- | 175 | --- | ||
| IS | Umthombo Oqhubekayo Wamanje1,5 | VG=VD=0V , Force Current | --- | --- | 70 | A |
| I-VSD | I-Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1 | V |
