I-WSD30350DN56G N-channel 30V 350A DFN5X6-8 WINSOK MOSFET
Uhlolojikelele lomkhiqizo we-WINSOK MOSFET
I-voltage ye-WSD30350DN56G MOSFET ingu-30V, okwamanje ingu-350A, ukumelana ngu-1.8mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.
Izindawo zokufaka izicelo ze-WINSOK MOSFET
I-E-cigarettes MOSFET, i-MOSFET yokushaja okungenantambo, i-drones MOSFET, i-MOSFET yokunakekelwa kwezokwelapha, amashaja ezimoto i-MOSFET, izilawuli i-MOSFET, imikhiqizo yedijithali i-MOSFET, izinto zikagesi ezincane zasendlini i-MOSFET, izinto zikagesi ezithengwayo i-MOSFET.
Imingcele ye-MOSFET
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi |
| I-VDS | I-Drain-Source Voltage | 30 | V |
| VGS | Isango-Source Voltage | ±20 | V |
| ID@TC=25℃ | Ukukhipha Okuqhubekayo Kwamanje(I-Silicon Limited）1,7 | 350 | A |
| ID@TC=70℃ | I-Continuous Drain Current(Silicon Limited）1,7 | 247 | A |
| I-IDM | I-Pulsed Drain yamanje2 | 600 | A |
| I-EAS | I-Single Pulse Avalanche Energy3 | 1800 | mJ |
| I-IAS | I-Avalanche Yamanje | 100 | A |
| PD@TC=25℃ | Ukushabalaliswa kwamandla okuphelele4 | 104 | W |
| I-TSTG | Ibanga Lokushisa Lesitoreji | - 55 kuya ku-150 | ℃ |
| TJ | I-Operating Junction Temperature Range | - 55 kuya ku-150 | ℃ |
| Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi |
| BVI-DSS | I-Drain-Source Breakdown Voltage | VGS=0v, ngiD=250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVI-DSSI-Temperature Coefficient | Ireferensi ku-25℃,ID=1mA | --- | 0.022 | --- | V/℃ |
| I-RDS(VULIWE) | I-Static Drain-Source On-Resistance2 | VGS=10V , ngiD=20A | --- | 0.48 | 0.62 | mΩ |
| VGS=4.5V , ID=20A | --- | 0.72 | 0.95 | |||
| I-VGS(th) | I-Gate Threshold Voltage | VGS=VDS,ID=250uA | 1.2 | 1.5 | 2.5 | V |
| △VGS(th) | VGS(th)I-Temperature Coefficient | --- | -6.1 | --- | mV/℃ | |
| IDSS | I-Drain-Source Ukuvuza kwamanje | VDS=24V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| I-IGSS | Ukuvuza Kwesango Lomthombo Wamanje | VGS=±20v ,vDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=5v, ngiD=10A | --- | 40 | --- | S |
| Rg | Isango Ukumelana | VDS=0V , VGS=0V , f=1MHz | --- | 3.8 | 1.5 | Ω |
| Qg | Isamba Semali Yesango (4.5V) | VDS=15V , VGS=4.5V , ID=20A | --- | 89 | --- | nC |
| Qgs | I-Gate-Source Charge | --- | 37 | --- | ||
| Qgd | I-Gate-Drain Charge | --- | 20 | --- | ||
| I-Td(ivuliwe) | Vula Isikhathi Sokubambezeleka | VDD=15V , VGEN=10V , RG=1Ω,ID=10A | --- | 25 | --- | ns |
| Tr | Isikhathi Sokuvuka | --- | 34 | --- | ||
| Td(cishiwe) | Ukuvala Isikhathi Sokubambezeleka | --- | 61 | --- | ||
| Tf | Isikhathi Sekwindla | --- | 18 | --- | ||
| Ciss | Amandla Wokufaka | VDS=15V , VGS=0V , f=1MHz | --- | 7845 | --- | pF |
| I-Coss | Amandla Okukhiphayo | --- | 4525 | --- | ||
| Crss | I-Reverse Transfer Capacitance | --- | 139 | --- |
