I-WSD30300DN56G N-channel 30V 300A DFN5X6-8 WINSOK MOSFET
Uhlolojikelele lomkhiqizo we-WINSOK MOSFET
I-voltage ye-WSD20100DN56 MOSFET ingu-20V, okwamanje ingu-90A, ukumelana ngu-1.6mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.
Izindawo zokufaka izicelo ze-WINSOK MOSFET
Ugwayi we-elekthronikhi i-MOSFET, i-drones MOSFET, amathuluzi kagesi i-MOSFET, izibhamu ze-fascia MOSFET, i-PD MOSFET, izinto zikagesi ezincane zasendlini i-MOSFET.
I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo
I-AOS MOSFET AON6572.
I-POTENS Semiconductor MOSFET PDC394X.
Imingcele ye-MOSFET
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi |
| I-VDS | I-Drain-Source Voltage | 20 | V |
| VGS | Isango-Umthombo Voltage | ±12 | V |
| ID@TC=25℃ | Ukukhipha Okuqhubekayo Kwamanje1 | 90 | A |
| ID@TC=100℃ | Ukukhipha Okuqhubekayo Kwamanje1 | 48 | A |
| I-IDM | I-Pulsed Drain yamanje2 | 270 | A |
| I-EAS | I-Single Pulse Avalanche Energy3 | 80 | mJ |
| I-IAS | I-Avalanche Yamanje | 40 | A |
| PD@TC=25℃ | Ukushabalaliswa kwamandla okuphelele4 | 83 | W |
| I-TSTG | Ibanga Lokushisa Lesitoreji | - 55 kuya ku-150 | ℃ |
| TJ | I-Operating Junction Temperature Range | - 55 kuya ku-150 | ℃ |
| RθJA | I-Thermal Resistance Junction-ambient1(t≦10S) | 20 | ℃/W |
| RθJA | I-Thermal Resistance Junction-ambient1(Izwe elizinzile) | 55 | ℃/W |
| RθJC | I-Thermal Resistance Junction-case1 | 1.5 | ℃/W |
| Uphawu | Ipharamitha | Izimo | Okuncane | Thayipha | Ubukhulu | Iyunithi |
| I-BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | 23 | --- | V |
| I-VGS(th) | I-Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 0.68 | 1.0 | V |
| I-RDS(VULIWE) | I-Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | --- | 1.6 | 2.0 | mΩ |
| I-RDS(VULIWE) | I-Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A | 1.9 | 2.5 | mΩ | |
| I-RDS(VULIWE) | I-Static Drain-Source On-Resistance2 | VGS=2.5V , ID=20A | --- | 2.8 | 3.8 | mΩ |
| IDSS | Ukuvuza Komthombo Wamanje | VDS=16V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=16V , VGS=0V , TJ=125℃ | --- | --- | 5 | |||
| I-IGSS | Ukuvuza Kwesango Lomthombo Wamanje | VGS=±10V , VDS=0V | --- | --- | ±10 | uA |
| Rg | Isango Ukumelana | VDS=0V , VGS=0V , f=1MHz | --- | 1.2 | --- | Ω |
| Qg | Isamba Semali Yesango (10V) | VDS=15V , VGS=10V , ID=20A | --- | 77 | --- | nC |
| Qgs | I-Gate-Source Charge | --- | 8.7 | --- | ||
| Qgd | I-Gate-Drain Charge | --- | 14 | --- | ||
| I-Td(ivuliwe) | Vula Isikhathi Sokubambezeleka | VDD=15V , VGS=10V , RG=3 , ID=20A | --- | 10.2 | --- | ns |
| Tr | Isikhathi Sokuvuka | --- | 11.7 | --- | ||
| Td(cishiwe) | Ukuvala Isikhathi Sokubambezeleka | --- | 56.4 | --- | ||
| Tf | Isikhathi Sekwindla | --- | 16.2 | --- | ||
| Ciss | Amandla Wokufaka | VDS=10V , VGS=0V , f=1MHz | --- | 4307 | --- | pF |
| I-Coss | Amandla Okukhiphayo | --- | 501 | --- | ||
| Crss | I-Reverse Transfer Capacitance | --- | 321 | --- | ||
| IS | Umthombo Oqhubekayo Wamanje1,5 | VG=VD=0V , Force Current | --- | --- | 50 | A |
| I-VSD | I-Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1.2 | V |
| trr | Isikhathi Sokubuyisela emuva | IF=20A , di/dt=100A/µs , TJ=25℃ | --- | 22 | --- | nS |
| Qrr | Buyisela Imali Yokubuyisela | --- | 72 | --- | nC |
