I-WSD3023DN56 N-Ch ne-P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

incazelo emfushane:

Inombolo Yemodeli:I-WSD3023DN56

I-BVDSS:30V/-30V

RDSON:14mΩ/23mΩ

I-ID:14A/-12A

Isiteshi:I-N-C ne-P-Channel

Iphakheji:DFN5*6-8

Ihlobo Lomkhiqizo:I-voltage ye-WSD3023DN56 MOSFET ingu-30V/-30V, i-is14A/-12A yamanje, ukumelana kungu-14mΩ/23mΩ, isiteshi yi-N-Ch ne-P-Channel, kanti iphakheji yi-DFN5*6-8.

Izicelo:Ama-Drones, izinjini, i-automotive electronics, izinto zikagesi ezinkulu.

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Imininingwane Yomkhiqizo

Isicelo

Omaka bomkhiqizo

Incazelo evamile

I-WSD3023DN56 iwumzila ophakeme kakhulu wokusebenza we-N-ch kanye ne-P-ch MOSFETs anomthamo wamaseli ophakeme ngokwedlulele, ohlinzeka nge-RDSON enhle kakhulu kanye nokushajwa kwesango kuningi lezinhlelo zokusebenza zokuguqula ibhake elivumelanayo. I-WSD3023DN56 ihlangabezana nemfuneko ye-RoHS kanye ne-Green Product engu-100% EAS eqinisekisiwe ngokwethembeka okugcwele okugunyaziwe.

Izici

Ubuchwepheshe obuthuthukisiwe be-Trench ye-cell density high,I-Super Low Gate Charge,Umphumela omuhle kakhulu we-CdV/dt uyancipha,100% EAS Guaranteed,Idivayisi Eluhlaza Iyatholakala.

Izinhlelo zokusebenza

I-High Frequency Point-of-Load Buck Converter ye-MB/NB/UMPC/VGA,Inethiwekhi ye-DC-DC Power System, i-CCFL Back-light Inverter,i-Drones, izinjini, ugesi wezimoto, izinto zikagesi ezinkulu.

inombolo yezinto ezibonakalayo

I-PANJIT PJQ5606

Imingcele ebalulekile

Uphawu	Ipharamitha	Isilinganiso		Amayunithi
Uphawu	Ipharamitha	N-Ch	P-Ch	Amayunithi
I-VDS	I-Drain-Source Voltage	30	-30	V
VGS	Isango-Umthombo Voltage	±20	±20	V
ID	I-Continuous Drain Current, VGS(NP)=10V,Ta=25℃	14*	-12	A
ID	I-Continuous Drain Current, VGS(NP)=10V,Ta=70℃	7.6	-9.7	A
IDP a	I-Pulse Drain Yamanje Ihloliwe, i-VGS(NP)=10V	48	-48	A
I-EAS c	Amandla e-Avalanche, i-pulse eyodwa , L=0.5mH	20	20	mJ
IAS c	I-Avalanche yamanje, i-pulse eyodwa , L=0.5mH	9	-9	A
PD	Ukushabalaliswa kwamandla okuphelele, Ta=25℃	5.25	5.25	W
I-TSTG	Ibanga Lokushisa Lesitoreji	-55 kuya ku-175	-55 kuya ku-175	℃
TJ	I-Operating Junction Temperature Range	175	175	℃
RqJA b	I-Thermal Resistance-Junction to Ambient,Stay State	60	60	℃/W
RqJC	I-Thermal Resistance-Junction to Case,Isimo Esiqinile	6.25	6.25	℃/W

Uphawu	Ipharamitha	Izimo	Okuncane.	Thayipha.	Ubukhulu.	Iyunithi
I-BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	30	---	---	V
I-RDS(VULIWE)d	I-Static Drain-Source On-Resistance	VGS=10V , ID=8A	---	14	18.5	mΩ
I-RDS(VULIWE)d	I-Static Drain-Source On-Resistance	VGS=4.5V , ID=5A	---	17	25	mΩ
I-VGS(th)	I-Gate Threshold Voltage	VGS=VDS , ID =250uA	1.3	1.8	2.3	V
IDSS	Ukuvuza Komthombo Wamanje	VDS=20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Ukuvuza Komthombo Wamanje	VDS=20V , VGS=0V , TJ=85℃	---	---	30	uA
I-IGSS	Ukuvuza Kwesango Lomthombo Wamanje	VGS=±20V , VDS=0V	---	---	±100	nA
Rg	Isango Ukumelana	VDS=0V , VGS=0V , f=1MHz	---	1.7	3.4	Ω
Qge	Isamba Semali Yesango	VDS=15V, VGS=4.5V, IDS=8A	---	5.2	---	nC
Qgse	I-Gate-Source Charge		---	1.0	---
Qgde	I-Gate-Drain Charge		---	2.8	---
Td(ku)e	Vula Isikhathi Sokubambezeleka	VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R.	---	6	---	ns
Tre	Isikhathi Sokuvuka		---	8.6	---
Td(cishiwe)e	Ukuvala Isikhathi Sokubambezeleka		---	16	---
Tfe	Isikhathi Sekwindla		---	3.6	---
Cisse	Amandla Wokufaka	VDS=15V , VGS=0V , f=1MHz	---	545	---	pF
I-Cosse	Amandla Okukhiphayo		---	95	---
Crsse	I-Reverse Transfer Capacitance		---	55	---