I-WSD25280DN56G N-channel 25V 280A DFN5X6-8 WINSOK MOSFET

imikhiqizo

I-WSD25280DN56G N-channel 25V 280A DFN5X6-8 WINSOK MOSFET

incazelo emfushane:

Inombolo Yengxenye:I-WSD25280DN56G

I-BVDSS:25V

I-ID:280A

RDSON:0.7mΩ 

Isiteshi:Isiteshi se-N

Iphakheji:DFN5X6-8


Imininingwane Yomkhiqizo

Isicelo

Omaka bomkhiqizo

Uhlolojikelele lomkhiqizo we-WINSOK MOSFET

I-voltage ye-WSD25280DN56G MOSFET ingu-25V, okwamanje ingu-280A, ukumelana ngu-0.7mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.

Izindawo zokufaka izicelo ze-WINSOK MOSFET

Iphoyinti Lokulayishwa Eliphezulu Okuvunyelanisiwe,Buck Converter,Inethiwekhi ye-DC-DC Power System,Isicelo Sethuluzi Lamandla,E-cigarettes MOSFET, wireless charger MOSFET, drones MOSFET, medical care MOSFET, car charger MOSFET, controller MOSFET, digital products MOSFET, small house appliance MOSFET, consumer electronics MOSFET.

I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo

I-Nxperian MOSFET PSMN1R-4ULD.

I-POTENS Semiconductor MOSFET PDC262X.

Imingcele ye-MOSFET

Uphawu

Ipharamitha

Isilinganiso

Amayunithi

I-VDS

I-Drain-Source Voltage

25

V

VGS

Isango-Source Voltage

±20

V

ID@TC=25

Ukukhipha Okuqhubekayo Kwamanje(I-Silicon Limited1,7

280

A

ID@TC=70

I-Continuous Drain Current(Silicon Limited1,7

190

A

I-IDM

I-Pulsed Drain yamanje2

600

A

I-EAS

I-Single Pulse Avalanche Energy3

1200

mJ

I-IAS

I-Avalanche Yamanje

100

A

PD@TC=25

Ukushabalaliswa kwamandla okuphelele4

83

W

I-TSTG

Ibanga Lokushisa Lesitoreji

- 55 kuya ku-150

TJ

I-Operating Junction Temperature Range

- 55 kuya ku-150

 

Uphawu

Ipharamitha

Izimo

Okuncane.

Thayipha.

Ubukhulu.

Iyunithi

BVI-DSS

I-Drain-Source Breakdown Voltage VGS=0v, ngiD=250uA

25

---

---

V

BVDSS/△TJ

BVI-DSSI-Temperature Coefficient Ireferensi ku-25,ID=1mA

---

0.022

---

V/

I-RDS(VULIWE)

I-Static Drain-Source On-Resistance2 VGS=10V , ngiD=20A

---

0.7

0.9 mΩ
VGS=4.5V , ID=20A

---

1.4

1.9

I-VGS(th)

I-Gate Threshold Voltage VGS=VDS,ID=250uA

1.0

---

2.5

V

VGS(th)

VGS(th)I-Temperature Coefficient

---

-6.1

---

mV/

IDSS

I-Drain-Source Ukuvuza kwamanje VDS=20V , VGS=0V , TJ=25

---

---

1

uA

VDS=20V , VGS=0V , TJ=55

---

---

5

I-IGSS

Ukuvuza Kwesango Lomthombo Wamanje VGS=±20v ,vDS=0V

---

---

±100

nA

gfs

Phambili Transconductance VDS=5v, ngiD=10A

---

40

---

S

Rg

Isango Ukumelana VDS=0V , VGS=0V , f=1MHz

---

3.8

1.5

Ω

Qg

Isamba Semali Yesango (4.5V) VDS=15V , VGS=4.5V , ID=20A

---

72

---

nC

Qgs

I-Gate-Source Charge

---

18

---

Qgd

I-Gate-Drain Charge

---

24

---

I-Td(ivuliwe)

Vula Isikhathi Sokubambezeleka VDD=15V , VGEN=10V ,RG=1Ω,ID=10A

---

33

---

ns

Tr

Isikhathi Sokuvuka

---

55

---

Td(cishiwe)

Ukuvala Isikhathi Sokubambezeleka

---

62

---

Tf

Isikhathi Sekwindla

---

22

---

Ciss

Amandla Wokufaka VDS=15V , VGS=0V , f=1MHz

---

7752

---

pF

I-Coss

Amandla Okukhiphayo

---

1120

---

Crss

I-Reverse Transfer Capacitance

---

650

---

 

 


  • Okwedlule:
  • Olandelayo:

  • Bhala umyalezo wakho lapha futhi usithumelele wona