I-WSD2090DN56 N-channel 20V 80A DFN5*6-8 WINSOK MOSFET

incazelo emfushane:

Inombolo Yemodeli:I-WSD2090DN56

I-BVDSS:20V

RDSON:2.8mΩ

I-ID:80A

Isiteshi:Isiteshi se-N

Iphakheji:DFN5*6-8

Ihlobo Lomkhiqizo:I-voltage ye-WSD2090DN56 MOSFET ingu-20V, okwamanje ingu-80A, ukumelana ngu-2.8mΩ, isiteshi yi-N-channel, futhi iphakheji yi-DFN5 * 6-8.

Izicelo:Ugwayi we-elekthronikhi, ama-drones, amathuluzi kagesi, izibhamu ze-fascia, i-PD, izinto ezincane zasendlini, njll.

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Imininingwane Yomkhiqizo

Isicelo

Omaka bomkhiqizo

Incazelo Ejwayelekile

I-WSD2090DN56 iwumzila wokusebenza ophakeme kakhulu we-N-Ch MOSFET onokuminyana kwamaseli aphezulu ngokwedlulele, ohlinzeka nge-RDSON enhle kakhulu kanye nokushajwa kwesango ezinhlelweni eziningi ze-synchronous buck converter izicelo .I-WSD2090DN56 ihlangabezana nemfuneko ye-RoHS kanye ne-Green Product engu-100% EAS eqinisekisiwe ngokwethembeka okugcwele okugunyaziwe.

Izici

Ubuchwepheshe be-Trench obuphezulu obusezingeni eliphezulu, Ukushaja kwe-Super Low Gate, ukwehla komphumela omuhle kakhulu we-CdV / dt, 100% EAS Guaranteed, Idivayisi Eluhlaza Iyatholakala

Izinhlelo zokusebenza

Ukushintsha, Isistimu Yamandla, Ukushintshwa Kwemithwalo, ugwayi we-elekthronikhi, ama-drones, amathuluzi kagesi, izibhamu ze-fascia, i-PD, izinto ezincane zasendlini, njll.

inombolo yezinto ezibonakalayo

I-AOS AON6572

Imingcele ebalulekile

Izilinganiso Eziphelele Eziphelele (TC=25℃ ngaphandle kwalapho kuphawulwe ngenye indlela)

Uphawu	Ipharamitha	Ubukhulu.	Amayunithi
I-VDSS	I-Drain-Source Voltage	20	V
I-VGSS	Isango-Umthombo Voltage	±12	V
ID@TC=25℃	I-Drain eqhubekayo yamanje, i-VGS @ 10V1	80	A
ID@TC=100℃	I-Drain eqhubekayo yamanje, i-VGS @ 10V1	59	A
I-IDM	I-Pulsed Drain Inothi yamanje1	360	A
I-EAS	I-Single Pulsed Avalanche Energy inothi2	110	mJ
PD	Ukuchithwa kwamandla	81	W
RJA	Ukumelana Nokushisa, Ukuhlangana Nekesi	65	℃/W
RθJC	I-Thermal Resistance Junction-Case 1	4	℃/W
TJ, TSTG	Ibanga Lokushisa Lokusebenza Nesitoreji	-55 ukuze +175	℃

Izimpawu zikagesi (TJ=25 ℃, ngaphandle uma kuboniswe ngenye indlela)

Uphawu	Ipharamitha	Izimo	Okuncane	Thayipha	Ubukhulu	Amayunithi
I-BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V, ID=250μA	20	24	---	V
△BVDSS/△TJ	I-BVDSS Temperature Coefficient	Ireferensi ku-25℃ , ID=1mA	---	0.018	---	V/℃
I-VGS(th)	I-Gate Threshold Voltage	VDS= VGS, ID=250μA	0.50	0.65	1.0	V
I-RDS(VULIWE)	I-Static Drain-Source On-Resistance	VGS=4.5V, ID=30A	---	2.8	4.0	mΩ
I-RDS(VULIWE)	I-Static Drain-Source On-Resistance	VGS=2.5V, ID=20A	---	4.0	6.0	mΩ
IDSS	I-Zero Gate Voltage Drain yamanje	VDS=20V,VGS=0V	---	---	1	μA
I-IGSS	Ukuvuza Kwesango Lomzimba Okwamanje	VGS=±10V, VDS=0V	---	---	±100	nA
Ciss	Amandla Wokufaka	VDS=10V,VGS=0V,f=1MHZ	---	3200	---	pF
I-Coss	Amandla Okukhiphayo		---	460	---
Crss	I-Reverse Transfer Capacitance		---	446	---
Qg	Isamba Semali Yesango	VGS=4.5V,VDS=10V,ID=30A	---	11.05	---	nC
Qgs	I-Gate-Source Charge		---	1.73	---
Qgd	I-Gate-Drain Charge		---	3.1	---
i-tD(ivuliwe)	Vula Isikhathi Sokubambezeleka	VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω	---	9.7	---	ns
tr	Vula Isikhathi Sokuvuka		---	37	---
tD(cishiwe)	Ukucisha Ukubambezeleka Isikhathi		---	63	---
tf	Isikhathi sokuvula sokuvala		---	52	---
I-VSD	I-Diode Forward Voltage	IS=7.6A,VGS=0V	---	---	1.2	V