I-WSD100N06GDN56 N-channel 60V 100A DFN5X6-8 WINSOK MOSFET
Uhlolojikelele lomkhiqizo we-WINSOK MOSFET
I-voltage ye-WSD100N06GDN56 MOSFET ingu-60V, okwamanje ingu-100A, ukumelana ngu-3mΩ, isiteshi yi-N-channel, kanti iphakheji yi-DFN5X6-8.
Izindawo zokufaka izicelo ze-WINSOK MOSFET
Izimpahla zamandla ezokwelapha i-MOSFET, ama-PDs MOSFET, ama-drones MOSFET, ugwayi we-electronic MOSFET, izinto zikagesi ezinkulu i-MOSFET, namathuluzi kagesi i-MOSFET.
I-WINSOK MOSFET ihambisana nezinye izinombolo zempahla yomkhiqizo
I-AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOS2XFET PDC69
Imingcele ye-MOSFET
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi | ||
| I-VDS | I-Drain-Source Voltage | 60 | V | ||
| VGS | Isango-Umthombo Voltage | ±20 | V | ||
| ID1,6 | Ukukhipha Okuqhubekayo Kwamanje | TC=25°C | 100 | A | |
| TC=100°C | 65 | ||||
| I-IDM2 | I-Pulsed Drain yamanje | TC=25°C | 240 | A | |
| PD | Ukukhipha Amandla Okukhulu | TC=25°C | 83 | W | |
| TC=100°C | 50 | ||||
| I-IAS | I-Avalanche yamanje, i-Single pulse | 45 | A | ||
| I-EAS3 | I-Single Pulse Avalanche Energy | 101 | mJ | ||
| TJ | I-Maximum Junction Temperature | 150 | ℃ | ||
| I-TSTG | Ibanga Lokushisa Lesitoreji | - 55 kuya ku-150 | ℃ | ||
| RθJA1 | I-Thermal Resistance Junction kuya ku-ambient | Izwe elizinzile | 55 | ℃/W | |
| RθJC1 | I-Thermal Resistance-Junction to Case | Izwe elizinzile | 1.5 | ℃/W | |
| Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi | |
| I-Static | |||||||
| V(BR)DSS | I-Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | I-Zero Gate Voltage Drain yamanje | I-VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| I-IGSS | Ukuvuza Kwesango Lamanje | VGS = ±20V, VDS = 0V | ±100 | nA | |||
| Mayelana Nezici | |||||||
| I-VGS(TH) | I-Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1.2 | 1.8 | 2.5 | V | |
| I-RDS(ivuliwe)2 | I-Drain-Source On-state Resistance | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Ukushintsha | |||||||
| Qg | Isamba Semali Yesango | I-VDS=30V VGS=10V ID=20A | 58 | nC | |||
| Qgs | I-Gate-Sour Charge | 16 | nC | ||||
| Qgd | I-Gate-Drain Charge | 4.0 | nC | ||||
| td (ku) | Vula Isikhathi Sokubambezeleka | VGEN=10V I-VDD=30V ID=20A RG=Ω | 18 | ns | |||
| tr | Vula Isikhathi Sokuvuka | 8 | ns | ||||
| td(cishiwe) | Ukucisha Ukubambezeleka Isikhathi | 50 | ns | ||||
| tf | Ukuvala Isikhathi sokuwa | 11 | ns | ||||
| Rg | Ukumelana nesango | VGS=0V, VDS=0V, f=1MHz | 0.7 | Ω | |||
| Amandla | |||||||
| Ciss | I-Capacitance | VGS=0V VDS=30V f=1MHz | 3458 | pF | |||
| I-Coss | Out Capacitance | 1522 | pF | ||||
| Crss | I-Reverse Transfer Capacitance | 22 | pF | ||||
| Izimpawu ze-Drain-Source Diode kanye nezilinganiso eziphezulu | |||||||
| IS1,5 | Umthombo Oqhubekayo Wamanje | VG=VD=0V , Force Current | 55 | A | |||
| I-ISM | Umthombo Wamanje3 | 240 | A | ||||
| I-VSD2 | I-Diode Forward Voltage | I-ISD = 1A , VGS=0V | 0.8 | 1.3 | V | ||
| trr | Isikhathi Sokubuyisela emuva | ISD=20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Buyisela Imali Yokubuyisela | 33 | nC | ||||
