I-metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, noma MOS FET) iwuhlobo lwe-field-effect transistor (FET), evame ukwakhiwa yi-oxidation elawulwayo ye-silicon. Inesango elihlanganisiwe, i-voltage enquma ukuqhutshwa kwedivayisi.
Isici sawo esiyinhloko ukuthi kukhona ungqimba lwe-silicon dioxide e-insulating phakathi kwesango lensimbi nesiteshi, ngakho-ke inokumelana nokufaka okuphezulu (kufika ku-1015Ω). Iphinde ihlukaniswe ngamashubhu e-N-channel kanye neshubhu yesiteshi sika-P. Ngokuvamile i-substrate (i-substrate) kanye nomthombo S kuxhunywe ndawonye.
Ngokuya ngezindlela ezihlukene zokuqhuba, ama-MOSFET ahlukaniswe abe uhlobo lokuthuthukisa kanye nohlobo lokuncipha.
Okubizwa ngokuthi uhlobo lokuthuthukisa kusho: uma i-VGS=0, ishubhu isesimweni sokunqanyulwa. Ngemva kokwengeza i-VGS efanele, abathwali abaningi bakhangwa esangweni, ngaleyo ndlela "bathuthukise" abathwali kule ndawo futhi benze isiteshi sokuqhuba. .
Imodi yokunciphisa isho ukuthi uma i-VGS=0, kwakhiwa isiteshi. Uma i-VGS elungile ingeziwe, abathwali abaningi bangageleza bephuma esiteshini, ngaleyo ndlela "banciphise" abathwali futhi bacime ithubhu.
Hlukanisa isizathu: Ukumelana okokufaka kwe-JFET kungaphezu kuka-100MΩ, futhi i-transconductance iphakeme kakhulu, lapho isango liholwa, indawo yasendlini kazibuthe kulula kakhulu ukubona isignali yedatha ye-voltage esebenzayo esangweni, ukuze ipayipi lithambekele kube phezulu, noma kuvame ukuba ku-off. Uma i-voltage yokungeniswa komzimba yengezwa ngokushesha esangweni, ngoba ukuphazamiseka okubalulekile kwe-electromagnetic kunamandla, isimo esingenhla sizobaluleka kakhulu. Uma inaliti yemitha ichezuka ngokucijile iye kwesokunxele, kusho ukuthi ipayipi livame ukuba phezulu, i-RDS yokumelana nomthombo wokukhipha amanzi iyakhula, futhi inani lamanje lomthombo wokukhipha amanzi liyehlisa i-IDS. Ngokuphambene, inaliti yemitha ichezukela ngokucijile iye kwesokudla, okubonisa ukuthi ipayipi livamise ukuthi licime, i-RDS iye phansi, bese i-IDS iye phezulu. Kodwa-ke, indawo ngqo lapho inaliti yemitha ichezukiswa khona kufanele incike ezigxotsheni ezinhle nezingezinhle ze-voltage eyengelwe (i-voltage esebenza indawo eqondile noma i-voltage yokusebenza ebuyela emuva) kanye nendawo emaphakathi yokusebenza yepayipi.
I-WINSOK DFN3x3 MOSFET
Uma sithatha isiteshi esingu-N njengesibonelo, senziwa ku-substrate ye-silicon yohlobo lwe-P enezifunda ezimbili ezixutshwe kakhulu zomthombo ongu-N+ kanye nezifunda zokusabalalisa amapayipi angu-N+, bese kuphuma i-electrode yomthombo S kanye ne-electrode D yokukhipha amanzi ngokulandelana. Umthombo ne-substrate zixhumeke ngaphakathi, futhi zihlala zigcina amandla afanayo. Uma ipayipi lixhunywe endaweni ephozithivu yokuphakelwa kukagesi futhi umthombo uxhunywe kutheminali enegethivu yendawo kagesi kanye ne-VGS=0, i-channel current (okungukuthi i-drain current) ID=0. Njengoba i-VGS ikhula kancane kancane, ikhangwa amandla kagesi wesango elihle, abathwali abambalwa abakhokhiswa kabi bangeniswa phakathi kwezifunda ezimbili zokusabalalisa, bakha umgudu wohlobo lwe-N ukusuka ku-drain kuya emthonjeni. Uma i-VGS inkulu kune-voltage yokuvula i-VTN yeshubhu (ngokuvamile cishe +2V), ishubhu le-N-channel liqala ukusebenza, lenze i-ID yamanje yokudonsa.
I-VMOSFET (VMOSFET), igama layo eliphelele yi-V-groove MOSFET. Kuyidivayisi esanda kuthuthukiswa esebenza kahle kakhulu, yokushintsha amandla ngemuva kwe-MOSFET. Ayizuzi nje kuphela i-impedance ephezulu yokufaka ye-MOSFET (≥108W), kodwa futhi nokushayela okuncane (cishe u-0.1μA). Iphinde ibe nezici ezinhle kakhulu ezifana ne-voltage ephezulu yokumelana (efika ku-1200V), amandla amakhulu okusebenza (1.5A ~ 100A), amandla aphumayo aphezulu (1 ~ 250W), i-transconductance linearity enhle, kanye nesivinini sokushintsha ngokushesha. Impela ngoba ihlanganisa izinzuzo zamashubhu e-vacuum kanye nama-transistors amandla, isetshenziswa kabanzi kuma-voltage amplifiers (ukukhulisa amandla kagesi kungafinyelela izinkulungwane zezikhathi), ama-amplifiers, ukushintshanisa amandla kanye nama-inverters.
Njengoba sonke sazi, isango, umthombo kanye nokukhipha amanzi e-MOSFET yendabuko kucishe kufane nendiza evundlile ku-chip, futhi ukusebenza kwayo ngokuyisisekelo kugeleza ngendlela evundlile. Ishubhu le-VMOS lihlukile. Inezici ezimbili ezinkulu zesakhiwo: okokuqala, isango lensimbi lamukela isakhiwo se-V-shaped groove; okwesibili, ine-conductivity eqondile. Njengoba amanzi adonsa ngemuva kwe-chip, i-ID ayigelezi ngokuvundlile ku-chip, kodwa iqala endaweni ene-N+ ene-doped kakhulu (umthombo S) futhi igelezela endaweni ene-N-drift ene-doped kancane ngokusebenzisa isiteshi esingu-P. Ekugcineni, ifika phansi iqonde phansi ukuze ikhiphe u-D. Ngenxa yokuthi indawo enqamulayo iyanda, imisinga emikhulu ingadlula. Njengoba kunongqimba oluvikelayo lwe-silicon dioxide phakathi kwesango ne-chip, kuseyisango elivalekile le-MOSFET.
Izinzuzo zokusebenzisa:
I-MOSFET iyisici esilawulwa yi-voltage, kuyilapho i-transistor iyisici esilawulwayo samanje.
Ama-MOSFET kufanele asetshenziswe uma inani elincane kuphela lamanje elivunyelwe ukudonswa emthonjeni wesiginali; ama-transistors kufanele asetshenziswe lapho i-voltage yesiginali iphansi futhi yamanje eyengeziwe ivunyelwe ukuthi idonswe emthonjeni wesiginali. I-MOSFET isebenzisa izinkampani ezithwala ugesi eziningi ukuze ihambise ugesi, ngakho ibizwa ngokuthi i-unipolar device, kuyilapho ama-transistors esebenzisa kokubili abathwali abaningi nabathwali abambalwa ukuze baphathe ugesi, ngakho-ke ibizwa ngokuthi i-bipolar device.
Umthombo nokukhipha amanzi kwamanye ama-MOSFET kungasetshenziswa ngokushintshana, futhi i-voltage yesango ingaba yinhle noma ibe yimbi, iwenze aguquguquke kakhulu kunama-triode.
I-MOSFET ingasebenza ngaphansi kwezimo zamanje ezincane kakhulu neziphansi kakhulu, futhi inqubo yayo yokukhiqiza ingahlanganisa kalula ama-MOSFET amaningi ku-silicon chip. Ngakho-ke, i-MOSFET isetshenziswe kabanzi kumasekethe amakhulu ahlanganisiwe.
Olueky SOT-23N MOSFET
Izici ezifanele zohlelo lokusebenza lwe-MOSFET ne-transistor
1. Umthombo s, isango g, kanye ne-drain d ye-MOSFET ihambelana ne-emitter e, isisekelo b, kanye nomqoqi c we-transistor ngokulandelanayo. Imisebenzi yabo iyafana.
2. I-MOSFET iyisisetshenziswa samanje esilawulwa yi-voltage, i-iD ilawulwa yi-vGS, futhi i-gm yokukhulisa i-gm ngokuvamile incane, ngakho amandla okukhulisa i-MOSFET mancane; i-transistor iyisisetshenziswa samanje esilawulwa manje, futhi i-iC ilawulwa yi-iB (noma i-iE).
3. Isango le-MOSFET alidonsi cishe akukho okwamanje (ig»0); kuyilapho isisekelo se-transistor sihlala sidonsa i-current ethile lapho i-transistor isebenza. Ngakho-ke, ukumelana nokufakwa kwesango kwe-MOSFET kuphakeme kunokumelana nokokufaka kwe-transistor.
4. I-MOSFET yakhiwe ngabathwali abaningi ababandakanyeka ekuqhubeni; ama-transistors anezithwali ezimbili, ama-multicarriers kanye nabathwali abambalwa, ababandakanyeka ekuqhubeni. Ukugxila kwabathwali abambalwa kuthintwa kakhulu izici ezifana nezinga lokushisa nemisebe. Ngakho-ke, ama-MOSFET anokuqina okungcono kwezinga lokushisa kanye nokumelana nemisebe enamandla kunama-transistors. Ama-MOSFET kufanele asetshenziswe lapho izimo zemvelo (izinga lokushisa, njll.) zihluka kakhulu.
5. Uma insimbi yomthombo kanye ne-substrate ye-MOSFET kuxhunywe ndawonye, umthombo nokukhipha amanzi kungasetshenziswa ngokushintshana, futhi izici zishintsha kancane; ngenkathi lapho umqoqi kanye ne-emitter ye-triode kusetshenziswa ngokushintshana, izici zihluke kakhulu. Inani lika-β lizoncishiswa kakhulu.
6. I-coefficient yomsindo we-MOSFET incane kakhulu. I-MOSFET kufanele isetshenziswe ngangokunokwenzeka esigabeni sokufakwayo samasekhethi akhulisa umsindo ophansi namasekhethi adinga isilinganiso esiphezulu sesiginali kuya kumsindo.
7. Kokubili i-MOSFET ne-transistor zingakha amasekhethi e-amplifier ahlukahlukene namasekhethi ashintshayo, kodwa eyokuqala inenqubo yokukhiqiza elula futhi inezinzuzo zokusebenzisa amandla aphansi, ukuzinza okuhle kwe-thermal, kanye nobubanzi bobubanzi bamandla kagesi okusebenza. Ngakho-ke, isetshenziswa kabanzi kumasekethe ahlanganisiwe amakhulu futhi amakhulu kakhulu.
8. I-transistor ine-on-resistance enkulu, kuyilapho i-MOSFET inokumelana okuncane, okungamakhulu ambalwa kuphela ama-mΩ. Kumishini kagesi yamanje, ama-MOSFET ngokuvamile asetshenziswa njengamaswishi, futhi ukusebenza kahle kwawo kuphakeme kakhulu.
WINSOK SOT-323 encapsulation MOSFET
I-MOSFET vs. Bipolar Transistor
I-MOSFET iyidivayisi elawulwa yi-voltage, futhi isango alithathi ngokuyisisekelo akukho okwamanje, kuyilapho i-transistor iyisisetshenziswa esilawulwa manje, futhi isisekelo kufanele sithathe okwamanje. Ngakho-ke, lapho isilinganiso samanje somthombo wesignali sisincane kakhulu, i-MOSFET kufanele isetshenziswe.
I-MOSFET ingumqhubi wezinkampani eziningi, kuyilapho bobabili abathwali be-transistor bebamba iqhaza ekuqhubeni. Njengoba ukugxila kwabathwali abambalwa kuzwela kakhulu ezimweni zangaphandle ezifana nezinga lokushisa nemisebe, i-MOSFET ifaneleka kakhulu ezimweni lapho imvelo ishintsha kakhulu.
Ngaphezu kokusetshenziswa njengamadivayisi we-amplifier namaswishi alawulekayo njengama-transistors, ama-MOSFET angasetshenziswa futhi njengezinqamuleli zomugqa ezilawulwa yi-voltage.
Umthombo kanye ne-drain ye-MOSFET i-symmetrical ngesakhiwo futhi ingasetshenziswa ngokushintshana. I-voltage yomthombo wesango yemodi yokunciphisa i-MOSFET ingaba yinhle noma ibe yimbi. Ngakho-ke, ukusebenzisa ama-MOSFET kulula kakhulu kunama-transistors.
Isikhathi sokuthumela: Oct-13-2023
